Damascene structure and opening thereof

Abstract

A method for fabricating a single-damascene opening is described. The method includes providing a substrate having a conductive line formed therein. A barrier layer, a dielectric layer, a metal hard mask layer, a silicon oxynitride layer, a bottom antireflection layer and a patterned photoresist layer are sequentially formed on the substrate. The bottom antireflection layer, the silicon oxynitride layer and the metal hard mask layer that are not covered by the patterned photoresist layer are removed in a single process step, until a part of the surface of the dielectric layer is exposed. Thereafter, the patterned photoresist layer and the bottom antireflection layer are removed. Further using the silicon oxynitride layer and the metal hard mask layer as a mask, a portion of the dielectric layer and a portion of the barrier layer are removed to form a damascene opening that exposes the surface of the conductive line.

1 . A single-damascene structure, comprising:
 a substrate, wherein a conductive line is disposed in the substrate;   a barrier layer, disposed on the substrate;   a dielectric layer, disposed on the barrier layer;   a metal hard mask layer, disposed on the dielectric layer;   a silicon oxynitride layer, disposed on the metal hard mask layer, wherein a damascene opening that exposes a surface of a part of the conductive line is configured in the silicon oxynitride layer, the metal hard mask layer, the dielectric layer and the barrier layer; and   a conductive layer, disposed in the damascene opening.   
   
   
       2 . The damascene structure of  claim 1 , further comprising a silicon oxide layer disposed on the silicon oxynitride layer. 
   
   
       3 . The damascene structure of  claim 1 , further comprising an oxide layer disposed on the silicon oxynitride layer. 
   
   
       4 . The damascene structure of  claim 1 , wherein the dielectric layer is constituted with a material comprising a low dielectric constant material. 
   
   
       5 . The damascene structure of  claim 1 , wherein the hard mask layer is constituted with a material selected from the group consisting of tantalum, tantalum nitride, titanium, titanium nitride, tungsten and tungsten nitride. 
   
   
       6 . The damascene structure of  claim 1 , wherein the conductive line is constituted with a material comprising copper. 
   
   
       7 . A dual-damascene structure, comprising:
 a substrate, wherein a conductive line is disposed in the substrate;   a barrier layer, disposed on the substrate;   a dielectric layer, disposed on the barrier layer;   a metal hard mask layer, disposed on the dielectric layer;   a silicon oxynitride layer, disposed on the metal hard mask layer, wherein a dual-damascene opening that exposes a part of a surface of the conductive line is configured in the silicon oxynitride layer, the metal hard mask layer, the dielectric layer and the barrier layer; and   a conductive layer, disposed in the dual damascene opening.   
   
   
       8 . The dual-damascene structure of  claim 7 , further comprising a silicon oxide layer disposed on the silicon oxynitride layer. 
   
   
       9 . The dual-damascene structure of  claim 7 , further comprising an oxide layer disposed on the silicon oxynitride layer. 
   
   
       10 . The dual-damascene structure of  claim 7 , wherein a material that constitutes the dielectric layer comprises a low dielectric constant material. 
   
   
       11 . The dual-damascene structure of  claim 7 , wherein a material that constitutes the hard mask layer is selected from the group consisting of tantalum, tantalum nitride, titanium, titanium nitride, tungsten and tungsten nitride. 
   
   
       12 . The dual-damascene structure of  claim 7 , wherein a material that constitutes the conductive line comprises copper.