Stacked polishing pad for high temperature applications

Abstract

The invention provides a polishing pad for chemical-mechanical polishing comprising a polishing layer, a bottom layer, and a hot-melt adhesive, the hot-melt adhesive joining together the polishing layer and the bottom layer. The hot-melt adhesive comprises between about 2 and about 18 wt. % EVA and is substantially resistant to delamination when the polishing layer attains a temperature of about 40° C. The invention also provides a method of polishing a substrate with the aforementioned polishing pad, as well as a method of preparing such a polishing pad.

1 . A polishing pad for chemical-mechanical polishing comprising:
 a polishing layer,   a bottom layer, wherein the bottom layer is substantially coextensive with the polishing layer,   a hot-melt adhesive, wherein the hot-melt adhesive joins together the polishing layer and the bottom layer, and the hot-melt adhesive comprises between about 2 and about 18 wt. % EVA and is substantially resistant to delamination when the polishing layer attains a temperature of about 40° C.   
     
     
         2 . The polishing pad of  claim 1 , wherein the hot-melt adhesive is substantially resistant to delamination when the polishing layer attains a temperature of about 60° C. 
     
     
         3 . The polishing pad of  claim 2 , wherein the hot-melt adhesive is substantially resistant to delamination when the polishing layer attains a temperature of about 80° C. 
     
     
         4 . The polishing pad of  claim 3 , wherein the hot-melt adhesive is substantially resistant to delamination when the polishing layer attains a temperature of about 100° C. 
     
     
         5 . The polishing pad of  claim 1 , wherein the hot-melt adhesive comprises about 12 to about 16 wt. % EVA. 
     
     
         6 . The polishing pad of  claim 1 , wherein the hot-melt adhesive comprises about 5 to about 11 wt. % EVA. 
     
     
         7 . The polishing pad of  claim 1 , wherein each of the polishing layer and the bottom layer comprises an optical endpoint detection port, and wherein the optical endpoint detection ports are substantially aligned. 
     
     
         8 . The polishing pad of  claim 1 , wherein the polishing pad further comprises one or more middle layers disposed between the polishing layer and the bottom layer, and wherein each of the polishing layer, the bottom layer, and the middle layer or layers is substantially coextensive and joined together with hot-melt adhesive. 
     
     
         9 . The polishing pad of  claim 8 , wherein each layer of the polishing pad comprises an optical endpoint detection port, and wherein the optical endpoint detection ports are substantially aligned. 
     
     
         10 . The polishing pad of  claim 1 , wherein the holding power of the hot-melt adhesive is such that, under the stress of a 1 kg load, the hot-melt adhesive moves about 0.2 mm or less after 1 hour at 40° C. 
     
     
         11 . The polishing pad of  claim 10 , wherein the holding power of the hot-melt adhesive is such that, under the stress of a 1 kg load, the hot-melt adhesive moves about 0.5 mm or less after 24 hours at 40° C. 
     
     
         12 . The polishing pad of  claim 11 , wherein the holding power of the hot-melt adhesive is such that, under the stress of a 1 kg load, the hot-melt adhesive moves about 0.3 mm or less after 24 hours at 40° C. 
     
     
         13 . The polishing pad of  claim 1 , wherein the holding power of the hot-melt adhesive is such that, under the stress of a 1 kg load, the hot-melt adhesive moves about 0.2 mm or less after 1 hour at 60° C. 
     
     
         14 . The polishing pad of  claim 13 , wherein the holding power of the hot-melt adhesive is such that, under the stress of a 1 kg load, the hot-melt adhesive moves about 0.5 mm or less after 24 hours at 60° C. 
     
     
         15 . The polishing pad of  claim 1 , wherein the holding power of the hot-melt adhesive is such that, under the stress of a 1 kg load, the hot-melt adhesive moves about 0.5 mm or less after 1 hour at 80° C. 
     
     
         16 . The polishing pad of  claim 15 , wherein the holding power of the hot-melt adhesive is such that, under the stress of a 1 kg load, the hot-melt adhesive moves about 1 mm or less after 24 hours at 80° C. 
     
     
         17 . The polishing pad of  claim 16 , wherein the holding power of the hot-melt adhesive is such that, under the stress of a 1 kg load, the hot-melt adhesive moves about 0.8 mm or less after 24 hours at 80° C. 
     
     
         18 . The polishing pad of  claim 1 , wherein the holding power of the hot-melt adhesive is such that, under the stress of a 1 kg load, the hot-melt adhesive moves about 0.5 mm or less after 1 hour at 100° C. 
     
     
         19 . The polishing pad of  claim 18 , wherein the holding power of the hot-melt adhesive is such that, under the stress of a 1 kg load, the hot-melt adhesive moves about 1.5 mm or less after 24 hours at 100° C. 
     
     
         20 . The polishing pad of  claim 19 , wherein the holding power of the hot-melt adhesive is such that, under the stress of a 1 kg load, the hot-melt adhesive moves about 1.2 mm or less after 24 hours at 100° C. 
     
     
         21 . The polishing pad of  claim 1 , wherein the melt index of the hot-melt adhesive is between about 4 g/10 min and about 400 g/10 min. 
     
     
         22 . A method of polishing a substrate comprising:
 (i) providing a polishing pad for chemical-mechanical polishing comprising
 a polishing layer, 
 a bottom layer, wherein the bottom layer is substantially coextensive with the polishing layer, and 
 a hot-melt adhesive, wherein the hot-melt adhesive joins together the polishing layer and the bottom layer, and the hot-melt adhesive comprises between about 2 and about 18 wt. % EVA and is substantially resistant to delamination when the polishing layer attains a temperature of about 40° C., 
   (ii) contacting the substrate with the polishing pad and a polishing composition, and   (iii) moving the polishing pad and the polishing composition relative to the substrate to abrade at least a portion of the surface of the substrate with the polishing pad to polish the substrate.   
     
     
         23 . The method of  claim 22 , wherein the method is carried out at a temperature sufficient to heat the polishing layer of the polishing pad to a temperature of between about 40° C. and about 100° C. 
     
     
         24 . The method of  claim 22 , wherein the holding power of the hot-melt adhesive is such that, under the stress of a 1 kg load, the hot-melt adhesive moves about 0.2 mm or less after 1 hour at 40° C. 
     
     
         25 . The method of  claim 24 , wherein the holding power of the hot-melt adhesive is such that, under the stress of a 1 kg load, the hot-melt adhesive moves about 0.5 mm or less after 24 hours at 40° C. 
     
     
         26 . The method of  claim 22 , wherein the holding power of the hot-melt adhesive is such that, under the stress of a 1 kg load, the hot-melt adhesive moves about 0.5 mm or less after 1 hour at 80° C. 
     
     
         27 . The method of  claim 26 , wherein the holding power of the hot-melt adhesive is such that, under the stress of a 1 kg load, the hot-melt adhesive moves about 1 mm or less after 24 hours at 80° C. 
     
     
         28 . The method of  claim 22 , wherein the melt index of the hot-melt adhesive is between about 4 g/10 min and about 400 g/10 min. 
     
     
         29 . The method of  claim 22 , wherein each of the polishing layer and the bottom layer comprises an optical endpoint detection port, the optical endpoint detections ports are substantially aligned and remain substantially aligned during contact of the substrate with the polishing pad, and the method further comprises detecting in situ a polishing endpoint. 
     
     
         30 . The method of  claim 29 , wherein the method is carried out at a temperature sufficient to heat the polishing layer of the polishing pad to a temperature of between about 40° C. and about 100° C. 
     
     
         31 . The method of  claim 22 , wherein the polishing pad further comprises one or more middle layers disposed between the polishing layer and the bottom layer, each of the polishing layer, the bottom layer, and the middle layer or layers is substantially coextensive and joined together with the hot-melt adhesive, each layer of the polishing pad comprises an optical endpoint detection port, and the optical endpoint detection ports are substantially aligned and remain substantially aligned during contact of the substrate with the polishing pad, and the method further comprises detecting in situ a polishing endpoint. 
     
     
         32 . The method of  claim 31 , wherein the method is carried out at a temperature sufficient to heat the polishing layer of the polishing pad to a temperature of between about 40° C. and about 100° C. 
     
     
         33 . A method of preparing a polishing pad for chemical-mechanical polishing of a substrate comprising:
 (i) providing a polishing pad for chemical-mechanical polishing comprising
 a polishing layer and 
 a bottom layer, wherein the bottom layer is substantially coextensive with the polishing layer, and 
   (ii) laminating at least one of the polishing layer and the bottom layer with a hot-melt adhesive, wherein the hot-melt adhesive joins together the polishing layer and the bottom layer, and the hot-melt adhesive comprises between about 2 and about 18 wt. % EVA and is substantially resistant to delamination when the polishing layer attains a temperature of about 40° C.   
     
     
         34 . The method of  claim 33 , wherein the lamination is carried out at a temperature sufficient to heat each laminated layer to a temperature that is equal to or greater than the activation temperature of the hot-melt adhesive. 
     
     
         35 . The method of  claim 34 , wherein the lamination is carried out at a temperature in the range of about 150° C. to about 200° C. 
     
     
         36 . The method of  claim 35 , wherein the lamination is carried out at a temperature in the range of about 170° C. to about 190° C. 
     
     
         37 . The method of  claim 34 , wherein each laminated layer attains a temperature in the range of about 80° C. to about 120° C. during lamination. 
     
     
         38 . The method of  claim 37 , wherein each laminated layer attains a temperature in the range of about 110° C. to about 120° C. during lamination. 
     
     
         39 . The method of  claim 33 , wherein the hot-melt adhesive is substantially resistant to delamination when the polishing layer attains a temperature of about 60° C. 
     
     
         40 . The method of  claim 33 , wherein the hot-melt adhesive is substantially resistant to delamination when the polishing layer attains a temperature of about 80° C. 
     
     
         41 . The method of  claim 33 , wherein the hot-melt adhesive is substantially resistant to delamination when the polishing layer attains a temperature of about 100° C. 
     
     
         42 . The method of  claim 33 , wherein each of the polishing layer and the bottom layer comprises an optical endpoint detection port, and the optical endpoint detections ports are substantially aligned. 
     
     
         43 . The method of  claim 33 , wherein the polishing pad further comprises one or more middle layers disposed between the polishing layer and the bottom layer, each of the polishing layer, the bottom layer, and the middle layer or layers is substantially coextensive and joined together with the hot-melt adhesive, each layer of the polishing pad comprises an optical endpoint detection port, and the optical endpoint detection ports are substantially aligned.