Substrate Peripheral Portion Measuring Device, and Substrate Peripheral Portion Polishing Apparatus

Abstract

A projecting/receiving unit ( 52 ) projects a laser light to a peripheral portion ( 30 ) and receives the reflected light while a liquid is being fed to a substrate ( 14 ) and is flowing on the peripheral portion ( 30 ). A signal processing controller ( 54 ) processes the electric signal of the reflected light to decide the state of the peripheral portion ( 30 ). The state of the peripheral portion being polished is monitored. Moreover, the polish end point is detected. A transmission wave other than the laser light may also be used. The peripheral portion ( 30 ) may also be enclosed by a passage forming member thereby to form a passage properly. The peripheral portion can be properly measured even in the situation where the liquid is flowing on the substrate peripheral portion.

1 . A substrate peripheral portion measuring device for measuring the state of the peripheral portion of a substrate, comprising:
 a wave transceiver for transmitting a transmission wave to said peripheral portion while a liquid is being fed to said substrate and is flowing on said peripheral portion, and for receiving a reflected wave from said peripheral portion; and   a received wave processing unit for processing the signal of said reflected wave to decide the state of said peripheral portion.   
   
   
       2 . A substrate peripheral portion measuring device in accordance with  claim 1 , further comprising:
 a passage forming portion enclosing said peripheral portion for forming a passage to feed said liquid onto said peripheral portion;   wherein the wave transmitting/receiving portion of said wave transceiver is arranged in said passage.   
   
   
       3 . A substrate peripheral portion measuring device in accordance with  claim 2 ,
 wherein the wall face of said passage has a wave collecting face shaped to further reflect said reflected wave thereby to collect said reflected wave; and   wherein said wave transceiver has a portion for receiving said reflected wave at a position where said reflected wave is collected.   
   
   
       4 . A substrate peripheral portion measuring device in accordance with  claim 1 , further comprising:
 a liquid removing unit for blowing away said liquid from said peripheral portion;   wherein said wave transceiver transmits said transmission wave to the place where said liquid is blown away by said liquid removing unit.   
   
   
       5 . A substrate peripheral portion measuring device in accordance with  claim 1 , further comprising:
 a liquid blocking unit enveloping said peripheral portion partially for blocking the arrival of the liquid at said peripheral portion;   wherein said wave transceiver is disposed to transmit/receive the wave through said liquid blocking unit.   
   
   
       6 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein said received wave processing unit decides the state of said peripheral portion on the basis of the relative change of said reflected wave accompanying the change of said substrate.   
   
   
       7 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein that said received wave processing unit decides the state of said peripheral portion on the basis of the time differentiation of said reflected wave accompanying the change of said substrate.   
   
   
       8 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein said received wave processing unit decides the state of said peripheral portion by performing a frequency analysis of said reflected wave.   
   
   
       9 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein said received wave processing unit performs an end point detection of the processing of said peripheral portion.   
   
   
       10 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein said received wave processing unit monitors the state of the treating procedure of said peripheral portion.   
   
   
       11 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein said received wave processing unit detects a defect of said peripheral portion.   
   
   
       12 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein said wave transceiver transmits at least one of a laser light, a while light, a microwave, an ultrasonic wave and an alternating magnetic field signal as a transmission wave to said peripheral portion.   
   
   
       13 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein a plurality of said wave transceivers are arranged along the peripheral portion of said substrate.   
   
   
       14 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein the substrate peripheral portion to be measured has a silicon nitride film, a silicon oxide film, a poly-silicon film, a barrier film of Ta, TaN, TiN, Ti or the like, or a metal film of Cu, W or the like.   
   
   
       15 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein said received wave processing unit clears the signal of said reflected wave of noise components.   
   
   
       16 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein said wave transceiver is configured to project a laser light and to receive a reflected light; and   wherein a beam size is set according to the movement of the turning wafer.   
   
   
       17 . A substrate peripheral portion measuring device in accordance with  claim 1 , further comprising:
 a modulation unit for modulating the laser light projected as said transmission wave by said wave transceiver; and   a synchronism detecting unit for detecting the reflected light received as said reflected wave by said wave transceiver, in synchronism with the modulation by said modulation unit.   
   
   
       18 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein said wave transceiver is configured to send transmission waves of a plurality of kinds; and   wherein said reflected wave processing unit is configured to process reflected waves of a plurality of kinds received by said wave transceiver.   
   
   
       19 . A substrate peripheral portion measuring device in accordance with  claim 18 ,
 wherein the kind of transmission wave to be used for the measurement is changed according to the material of said peripheral portion of said substrate.   
   
   
       20 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein said received wave processing unit decides the state of said peripheral portion on the basis of zone data obtained from reflected waves of measurement zones disposed along the outer circumference of said substrate.   
   
   
       21 . A substrate peripheral portion measuring device in accordance with  claim 20 ,
 wherein said received wave processing unit decides the state of said peripheral portion by comparing the zone data obtained from said measurement zones.   
   
   
       22 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein said received wave processing unit decides the state of said peripheral portion on the basis of the change of the reflection according to the material change of the surface of said peripheral portion accompanying the treatment of said substrate.   
   
   
       23 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein said received wave processing unit decides the state of said peripheral portion on the basis of the pattern change of said reflected wave according to the material change of the surface of said peripheral portion accompanying the treatment of said substrate.   
   
   
       24 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein said substrate peripheral portion measuring device belongs to a substrate peripheral portion polishing apparatus for polishing the peripheral portion of a substrate and measures the polished state of the peripheral portion of the substrate being polished.   
   
   
       25 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein said substrate peripheral portion measuring device belongs to a substrate treating apparatus provided with a substrate peripheral portion polishing apparatus for polishing the peripheral portion of a substrate and measures the polished state of the peripheral portion of the substrate being polished.   
   
   
       26 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein said substrate peripheral portion measuring device belongs to a substrate rinsing apparatus and measures the polished state of the peripheral portion of the substrate being rinsed.   
   
   
       27 . A substrate peripheral portion measuring device in accordance with  claim 1 ,
 wherein said substrate peripheral portion measuring device belongs to substrate treating apparatus provided with a substrate rinsing apparatus and measures the polished state of the peripheral portion of the substrate being rinsed.   
   
   
       28 . A substrate peripheral portion polishing apparatus comprising:
 a substrate holder for holding a substrate;   a substrate turning unit for turning said substrate;   a liquid supply unit for supplying said substrate with a liquid;   an peripheral portion polishing unit for polishing the peripheral portion of said substrate while being supplied with said liquid;   a wave transceiver for transmitting a transmission wave to said peripheral portion while said liquid is flowing on said peripheral portion, and for receiving a reflected wave from said peripheral portion;   a received wave processing unit for processing the signal of said reflected wave to decide the polished state of said peripheral portion; and   a control unit for controlling the polish of said peripheral portion in accordance with the polished state of said peripheral portion obtained by said received wave processing unit.   
   
   
       29 . A substrate peripheral portion polishing apparatus in accordance with  claim 28 , further comprising:
 a passage forming portion enclosing said peripheral portion for forming a passage to feed said liquid onto said peripheral portion;   wherein the wave transmitting/receiving portion of said wave transceiver is arranged in said passage.   
   
   
       30 . A substrate peripheral portion polishing apparatus in accordance with  claim 29 ,
 wherein the wall face of said passage has a wave collecting face shaped to further reflect said reflected wave thereby to collect said reflected wave; and   wherein said wave transceiver has a portion at a position, where said reflected wave is collected, for receiving said reflected wave.   
   
   
       31 . A substrate peripheral portion polishing apparatus in accordance with  claim 28 , further comprising:
 a liquid removing unit for blowing away said liquid from said peripheral portion;   wherein said wave transceiver transmits said transmission wave to the place where said liquid is blown away by said liquid removing unit.   
   
   
       32 . A substrate peripheral portion polishing apparatus in accordance with  claim 28 , further comprising:
 a liquid blocking unit enveloping said peripheral portion partially for blocking the arrival of the liquid at said peripheral portion;   wherein said wave transceiver is disposed to transmit/receive the wave through said liquid blocking unit.   
   
   
       33 . A substrate peripheral portion polishing apparatus in accordance with  claim 28 ,
 wherein said received wave processing unit detects the polish end point of the peripheral portion; and   wherein said control unit ends the polish of said peripheral portion when the polish end point of said peripheral portion is detected.   
   
   
       34 . A substrate peripheral portion polishing apparatus in accordance with  claim 28 ,
 wherein said received wave processing unit monitors the state of the polishing procedure of the peripheral portion; and   wherein said control unit controls the polishing condition of said peripheral portion in accordance with the state of the polishing procedure of said peripheral portion.   
   
   
       35 . A substrate peripheral portion polishing apparatus in accordance with  claim 34 ,
 wherein said control unit controls at least one of the turning speed of said substrate, the pushing force of the polishing tool to said peripheral portion, the feed movement of the polishing tape, the feed speed of the polishing tape, the relative movement of the polishing head with respect to the substrate, the relative moving speed of the polishing head with respect to the substrate, and the feed rate of said liquid.   
   
   
       36 . A substrate peripheral portion polishing apparatus in accordance with  claim 28 ,
 wherein said received wave processing unit decides whether or not the peripheral portion is defective.   
   
   
       37 . A substrate peripheral portion polishing apparatus in accordance with  claim 28 , further comprising:
 an abnormality detecting unit for detecting that a polish abnormality has occurred when the polish end point is not detected even if the polishing time reaches a predetermined maximum polishing time;   wherein said control unit stops the polish when the abnormality is detected by said abnormality detecting unit.   
   
   
       38 . A substrate peripheral portion polishing apparatus in accordance with  claim 28 , further comprising:
 an abnormality detecting unit for detecting that a polish abnormality has occurred when the waveform of the reflected wave is abnormal;   wherein said control unit stops the polish when the abnormality is detected by said abnormality detecting unit.   
   
   
       39 . A substrate peripheral portion polishing apparatus in accordance with  claim 28 , further comprising:
 a tool exchange informing unit for informing the arrival of an exchanging timing of a polishing tool when the polishing rate obtained from said reflected wave lowers to a predetermined tool exchanging threshold rate.   
   
   
       40 . A substrate peripheral portion polishing apparatus in accordance with  claim 28 ,
 wherein said wave transceiver is configured to send a plurality of kinds of transmission waves; and   wherein the kind of said transmission wave to be used for the measurement is changed according to the proceeding situation of the polishing procedure determined from said reflected wave.   
   
   
       41 . A substrate peripheral portion polishing apparatus in accordance with  claim 28 ,
 wherein said wave transceiver is configured to send a plurality of kinds of transmission waves; and   wherein the kind of said transmission wave to be used for the measurement is changed in association with the change of the polishing condition by said control unit.   
   
   
       42 . A substrate peripheral portion polishing apparatus in accordance with  claim 28 ,
 wherein said control unit controls the polish of said substrate on the basis of said polishing state and the control parameter of an peripheral portion polishing tool.   
   
   
       43 . A substrate peripheral portion polishing apparatus in accordance with  claim 42 ,
 wherein said control unit interchanges the control based on said control parameter and the control based on said polishing state, in accordance with the progress of the polishing procedure of the substrate.   
   
   
       44 . A substrate peripheral portion polishing apparatus in accordance with  claim 28 ,
 wherein said received wave processing unit detects the polish end point by comparing the polish end point target set according to the reflected wave at an initial polishing stage and the reflected wave obtained from said wave transceiver.   
   
   
       45 . A substrate peripheral portion polishing apparatus in accordance with  claim 28 , further comprising:
 an end time setting unit for setting the polish end time, at which the polish end point is reached, on the basis of a reference time till a predetermined reference polishing state is obtained in the polishing procedure.   
   
   
       46 . A substrate rinsing apparatus comprising:
 a substrate holder for holding a substrate;   a substrate turning unit for turning said substrate;   a liquid supply unit for supplying said substrate with a liquid;   a wave transceiver for transmitting a transmission wave to the peripheral portion of said substrate while said liquid is flowing on said peripheral portion, and for receiving a reflected wave from said peripheral portion; and   a received wave processing unit for processing the signal of said reflected wave to decide the polished state of said peripheral portion.   
   
   
       47 . A substrate peripheral portion measuring method for measuring the state of the peripheral portion of a substrate, including:
 transmitting a transmission wave to said peripheral portion while a liquid is being fed to said substrate and is flowing on said peripheral portion;   
     receiving a reflected wave from said peripheral portion; and
 processing the signal of said reflected wave to decide the state of said peripheral portion. 
 
   
   
       48 . A substrate peripheral portion polishing method including:
 holding a substrate;   turning said substrate;   supplying said substrate with a liquid;   polishing the peripheral portion of said substrate while said liquid is being supplied;   transmitting a transmission wave to said peripheral portion while said liquid is flowing on said peripheral portion;   receiving a reflected wave from said peripheral portion;   processing the signal of said reflected wave to decide the polished state of said peripheral portion; and   controlling the polish of said peripheral portion in accordance with the polished state of said peripheral portion.   
   
   
       49 . A substrate rinsing method including:
 holding a substrate;   turning said substrate;   supplying said substrate with a liquid;   transmitting a transmission wave to said peripheral portion while said liquid is flowing on the peripheral portion of said substrate;   receiving a reflected wave from said peripheral portion; and   processing the signal of said reflected wave to decide the polished state of said peripheral portion.