Surface-emitting laser device

Abstract

A VCSEL device includes a polyimide having a larger thickness (d 1 ) on the surface of a semiconductor layer structure in a peripheral area 54 , which is separated from a mesapost by an annular groove 52 . The top surface of the central mesapost 30 is located at a lower position compared to the top surface of the peripheral area 54 . A structure is obtained wherein the mesapost is not contacted by a jig or probe during handling the device in the test or assembly thereof.

1 . A surface-emitting laser (VCSEL) device comprising a layer structure including a top DBR mirror, a bottom DBR mirror and an active layer interposed between said top DBR mirror and said bottom DBR mirror, a layer portion of said layer structure which includes at least said active layer being configured as a mesapost, wherein:
 a top surface of a dielectric film formed in a peripheral area disposed outside said mesapost is located at a higher position compared to a top surface of said mesapost.