US2008273368A1PendingUtilityA1

Method and apparatus for reading data from a ferromagnetic memory cell

42
Individually held — no corporate assignee on recordPriority: Mar 9, 2000Filed: Jul 14, 2008Published: Nov 6, 2008
Est. expiryMar 9, 2020(expired)· nominal 20-yr term from priority
Inventors:Richard M. Lienau
G11C 11/14G11C 11/18G11C 11/15
42
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Claims

Abstract

A ferromagnetic memory cell is disclosed. The cell includes a bit ( 10 ), made of a ferromagnetic material, having a remnant polarity. The cell also includes a read drive line ( 20 ) coupled to a first portion of the bit ( 10 ), to feed a current into the bit ( 10 ). A sense conductor ( 30 ) is coupled to a second portion of the bit ( 10 ), to receive the current from the bit ( 10 ). The current conducted through the bit ( 10 ) is responsive to the polarity of the bit ( 10 ). A method is also disclosed for determining the magnetic polarity of a ferromagnetic bit ( 10 ). In this method, a bit ( 10 ) is provided that is made of ferromagnetic material and has a remnant polarity. An input current ( 50 ) is fed into the bit ( 10 ) through a read drive line ( 20 ) coupled to a first portion of the bit ( 10 ). An output current ( 60 ) is received from the bit ( 10 ) through a sense conductor ( 30 ) coupled to a second portion of the bit ( 10 ). The current conducted through the bit ( 10 ) is responsive to the polarity of the bit ( 10 ). A variance between the input current ( 50 ) and output current ( 60 ) is then sensed, from which the magnetic polarity of the bit ( 10 ) is determined.

Claims

exact text as granted — not AI-modified
1 - 13 . (canceled) 
   
   
       14 . A memory device, comprising
 a substrate;   a first conductor formed on a surface of the substrate;   a second conductor formed at an angle relative to the first conductor; and   a magnetic material having a first end formed proximate to the first conductor and a second end formed proximate to the second conductor, wherein when an input current on the first conductor is directed into the magnetic material, an output current results on the second conductor at variance with the input current to indicate a stored bit in the magnetic material.   
   
   
       15 . The memory device of  claim 14  wherein the second conductor is formed at about 90 degrees relative to the first conductor. 
   
   
       16 . The memory device of  claim 14  wherein the magnetic material has a height to width aspect ration of greater than 1:1. 
   
   
       17 . The memory device of  claim 14 , further comprising a write coil formed proximate to the magnetic material. 
   
   
       18 . The memory device of  claim 17  wherein the write coil surrounds the magnetic material up to and including 270 degrees. 
   
   
       19 . The memory device of  claim 15  wherein the first conductor is formed approximately centered along the first end of the magnetic material. 
   
   
       20 . The memory device of  claim 15  wherein the second conductor is formed approximately centered along the second end of the magnetic material. 
   
   
       21 . The memory device of  claim 15  wherein the first conductor is formed approximately along a side of the first end of the magnetic material. 
   
   
       22 . The memory device of  claim 15  wherein the second conductor is formed approximately along a side of the second end of the magnetic material. 
   
   
       23 . The memory device of  claim 14  wherein the first and second conductors are formed of copper. 
   
   
       24 . The memory device of  claim 14  wherein the first and second conductors are formed of aluminum. 
   
   
       25 . The memory device of  claim 14  wherein the substrate is formed from one of glass, silicon, or GaAs material. 
   
   
       26 . A method of determining a magnetic polarity of a bit comprising:
 providing a substrate;   feeding an input current to a first conductor formed on a surface of the substrate;   directing the input current into a magnetic material having a first end proximate to the first conductor; and   receiving an output current on a second conductor formed proximate to a second end of the magnetic material, wherein the second conductor is formed at an angle relative to the first conductor and the output current is at variance with the input current to indicate a stored bit in the magnetic material.   
   
   
       27 . The method of  claim 26  wherein the second conductor is formed at about 90 degrees relative to the first conductor. 
   
   
       28 . The method of  claim 27  wherein the first conductor is formed approximately centered along the first end of the magnetic material. 
   
   
       29 . The method of  claim 27  wherein the second conductor is formed approximately centered along the second end of the magnetic material. 
   
   
       30 . The method of  claim 27  wherein the first conductor is formed approximately along a side of the first end of the magnetic material. 
   
   
       31 . The method of  claim 27  wherein the second conductor is formed approximately along a side of the second end of the magnetic material.

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