Semiconductor component comprising a buried mirror

Abstract

A method for forming a buried mirror in a semiconductor component includes the steps of forming a structure comprising a semiconductor layer laid on an insulating layer covering a substrate; forming one or several openings in the semiconductor layer emerging at the surface of the insulating layer; eliminating a portion of the insulating layer, whereby a recess is formed; forming a second thin insulating layer against the wall of the recess; and forming a metal layer in the recess against the second insulating layer.

1 - 5 . (canceled) 
     
     
         6 . An integrated circuit formed in an SOI-type wafer formed of a silicon layer placed on a silicon oxide layer covering a silicon substrate, and comprising a semiconductor component comprising a buried mirror placed under an active semiconductor area, a portion of the silicon oxide layer being replaced by said mirror made of a metal layer covered with an insulating layer, a portion of the silicon layer located above the metal layer forming said active area of the component. 
     
     
         7 . The circuit of  claim 6 , including a photodiode type, in which photons are likely to create electron-hole pairs in said active area. 
     
     
         8 . The circuit of  claim 7 , wherein said component is an MSM-type photodiode in which metal electrodes are placed above the active area. 
     
     
         9 . The circuit of  claim 7 , wherein said component is a lateral photodiode in which P- and N-type doped areas separated by an intrinsic undoped area are formed in said active area. 
     
     
         10 . A photodiode, comprising:
 a substrate;   a metal reflector disposed over the substrate;   a first insulator disposed over the reflector; and   a semiconductor region disposed over the first insulator.   
     
     
         11 . The photodiode of  claim 10  wherein the first insulator has a thickness less than one quarter of a wavelength of light reflected by the reflector. 
     
     
         12 . The photodiode of  claim 10  wherein the first insulator has a thickness less than 20 nm. 
     
     
         13 . The photodiode of  claim 10  wherein the first insulator comprises silicon oxide. 
     
     
         14 . The photodiode of  claim 10  wherein the reflector has a thickness in the range of approximately 10 nm to 30 nm. 
     
     
         15 . The photodiode of  claim 10  wherein the reflector comprises aluminum. 
     
     
         16 . The photodiode of  claim 10 , further comprising a wall disposed around the semiconductor region and the reflector. 
     
     
         17 . The photodiode of  claim 16  wherein the wall comprises a second insulator. 
     
     
         18 . The photodiode of  claim 10 , further comprising a second insulator disposed between the substrate and the reflector. 
     
     
         19 . An integrated circuit, comprising:
 a photodiode, including,
 a substrate; 
 a metal reflector disposed over the substrate; 
 a first insulator disposed over the reflector; and 
 a semiconductor region disposed over the first insulator. 
   
     
     
         20 . A system, comprising:
 an integrated circuit, including,
 a photodiode, including,
 a substrate; 
 a metal reflector disposed over the substrate; 
 a first insulator disposed over the reflector; and 
 a semiconductor region disposed over the first insulator. 
 
   
     
     
         21 . An integrated circuit, comprising:
 a substrate;   a first metal reflector disposed over the substrate;   a first insulator disposed over the first reflector;   a semiconductor region disposed over the reflector;   a second insulator disposed over the semiconductor region; and   a second metal reflector disposed over the second insulator.   
     
     
         22 . The integrated circuit of  claim 21 , further comprising a third insulator disposed between the substrate and the first metal reflector. 
     
     
         23 - 27 . (canceled)