Dry etching method and apparatus for performing dry etching

Abstract

A dry etching method includes loading a wafer on a lower electrode having at least two cooling paths. Cooling fluids having different temperatures are supplied to each of the cooling paths of the lower electrode so that the multiple cooling paths are at different temperatures from one another. The wafer is etched during cooling.

1 - 6 . (canceled) 
   
   
       7 . An apparatus for performing dry etching, comprising:
 an etching chamber;   a lower electrode mounting a wafer having an etch-target layer thereon, the lower electrode comprising a plurality of cooling paths including a central cooling path and an edge cooling path;   an upper electrode disposed above the lower electrode; and   a fluid supply device configured to supply cooling fluids having different temperatures to each of the plurality of cooling paths.   
   
   
       8 . The apparatus according to  claim 7 , wherein the lower electrode further comprising a middle cooling path located between the central cooling path and the edge cooling path. 
   
   
       9 . The apparatus according to  claim 8 , wherein the fluid supply device comprises three inflow pipes configured to deliver the cooling fluids to the central cooling path, the edge cooling path, and the middle cooling path of the lower electrode. 
   
   
       10 - 16 . (canceled) 
   
   
       17 . An etching apparatus, comprising:
 an etching chamber;   an upper electrode disposed in an upper portion of the etching chamber;   a lower electrode disposed in a lower portion of the etching chamber opposite the upper electrode, the lower electrode to mount a wafer having an etch-target layer therein the lower electrode defining first, second and third cooling paths, wherein the etch-target layer is thicker at an edge portion thereof than at a central portion at a central portion and a temperature of the cooling fluid supplied to the central cooling path is lower than that of the cooling fluid supplied to the edge cooling path;   a first fluid supply device configured to supply a first coolant at a first temperature to the first cooling path;   a second fluid supply device configured to supply a second coolant at a second temperature to the second cooling path; and   a third fluid supply device configured to supply a third coolant at a third temperature to the third cooling path.   
   
   
       18 . (canceled) 
   
   
       19 . The apparatus according to  claim 9 , wherein a temperature of the cooling fluid supplied to the edge cooling path is higher than a temperature of the cooling fluid supplied to the middle cooling path, and the temperature of the cooling fluid supplied to the middle cooling path is higher than a temperature of the cooling fluid supplied to the central cooling path. 
   
   
       20 . The apparatus according to  claim 19 , wherein the temperature of the cooling fluid supplied to the edge cooling path is 30° C., the temperature of the cooling fluid supplied to the middle cooling path is 20° C., and the temperature of the cooling fluid supplied to the central cooling path is 10° C. 
   
   
       21 . The apparatus according to  claim 17 , wherein the first cooling path is an edge cooling path, and the second cooling path is a central cooling path, and the third cooling path is located between the first cooling path and the second cooling path. 
   
   
       22 . The apparatus according to  claim 21 , wherein the first temperature is greater than the second temperature. 
   
   
       23 . The apparatus according to  claim 22 , wherein the third temperature is lower than the first temperature and greater than the second temperature. 
   
   
       24 . The apparatus according to  claim 23 , wherein the first temperature is 30° C., and the second temperature is 20° C., and the third temperature is 10° C.