Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas

Abstract

A ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

1 . A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing, said article comprising: a ceramic formed from a combination of yttrium oxide and zirconium oxide, with yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %, wherein a mean grain size of said ceramic ranges from about 2 μm to about 8 μm. 
   
   
       2 . A ceramic article in accordance with  claim 1 , wherein said ceramic is formed from yttrium oxide at a concentration ranging from about 90 mole % to about 80 mole %, and zirconium oxide at a concentration ranging from about 10 mole % to about 20 mole %. 
   
   
       3 . (canceled) 
   
   
       4 . A ceramic article in accordance with  claim 1 , wherein a flexural strength of said ceramic ranges from about 120 MPa to about 140 MPa. 
   
   
       5 . A ceramic article in accordance with  claim 1 , wherein a fracture toughness of said ceramic ranges from about 1.1 MPa·mm 1/2  to about 1.3 MPa·m 1/2 . 
   
   
       6 . A ceramic article in accordance with  claim 1  or  claim 2 , wherein said article is selected from the group consisting of a lid, a lid liner, a nozzle, a gas distribution plate, a shower head, an electrostatic chuck component, a shadow frame, a substrate holding frame, a processing kit, and a chamber liner. 
   
   
       7 . A method of reducing the plasma erosion of a semiconductor processing apparatus contacted by a halogen-containing plasma, comprising: selecting said semiconductor processing apparatus to comprise ceramic, said ceramic formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %, wherein a mean grain size of said ceramic ranges from about 2 μm to about 8 μm. 
   
   
       8 . A method in accordance with  claim 7 , further comprising selecting said ceramic for said semiconductor processing apparatus to be formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 80 mole %, and zirconium oxide at a concentration ranging from about 10 mole % to about 20 mole %. 
   
   
       9 . A method in accordance with  claim 7  or  claim 8 , wherein said plasma erosion rate for a surface of said semiconductor processing apparatus upon exposure to a halogen-comprising plasma is less than about 0.2 μm/hr. 
   
   
       10 . A method in accordance with  claim 9 , wherein said plasma erosion rate for a surface of said semiconductor processing apparatus upon exposure to a halogen-comprising plasma ranges from about 0.1 μm/hr to about 0.2 μm/hr. 
   
   
       11 . A semiconductor processing apparatus having at least one surface exposed to a halogen-comprising plasma during a process, wherein said semiconductor processing apparatus surface is a ceramic which is resistant to erosion by halogen-containing plasmas, wherein said ceramic is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %, wherein a mean grain size of said ceramic ranges from about 2 μm to about 8 μm. 
   
   
       12 . A semiconductor processing apparatus in accordance with  claim 11 , wherein underlying said ceramic is a high purity aluminum alloy. 
   
   
       13 . A method in accordance with  claim 11 , wherein said semiconductor processing apparatus is a solid ceramic semiconductor processing apparatus. 
   
   
       14 . A semiconductor processing apparatus, said apparatus having at least one surface exposed to a halogen-comprising plasma during a process, wherein said surface is a ceramic which is resistant to erosion by halogen-containing plasmas, wherein said ceramic is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %. 
   
   
       15 . A semiconductor processing apparatus in accordance with  claim 14 , wherein underlying said ceramic is a high purity aluminum alloy. 
   
   
       16 . A semiconductor processing apparatus in accordance with  claim 14 , wherein said apparatus is a solid ceramic apparatus. 
   
   
       17 . A semiconductor processing apparatus in accordance with  claim 14 , wherein said apparatus is selected from the group consisting of a lid, a lid liner, a nozzle, a gas distribution plate, a shower head, an electrostatic chuck component, a shadow frame, a substrate holding frame, a processing kit, and a chamber liner. 
   
   
       18 . A semiconductor processing apparatus in accordance with  claim 14 , wherein a mean grain size of said ceramic ranges from about 0.5 μm to about 8.0 μm. 
   
   
       19 . A semiconductor processing apparatus in accordance with  claim 14 , wherein a flexural strength of said ceramic ranges from about 1100 MPa to about 1300 MPa. 
   
   
       20 . A semiconductor processing apparatus in accordance with  claim 14 , wherein a fracture toughness of said ceramic ranges from about 10 MPa·m 1/2  to about 12 MPa·m 1/2 . 
   
   
       21 . A method of reducing the plasma erosion of a semiconductor processing apparatus contacted by a halogen-containing plasma, comprising: selecting said semiconductor processing apparatus to be a ceramic-comprising article, said ceramic formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %. 
   
   
       22 . A method in accordance with  claim 21 , wherein said plasma erosion rate for a surface of said semiconductor processing apparatus, upon exposure to a halogen-comprising plasma, is less than about 0.4 μm/hr. 
   
   
       23 . A method in accordance with  claim 22  wherein said plasma erosion rate for a surface of said semiconductor processing apparatus, upon exposure to a halogen-comprising plasma, ranges from about 0.1 μm/hr to about 0.4 μm/hr. 
   
   
       24 . A method in accordance with  claim 21 , wherein at least one surface of said semiconductor processing apparatus, which surface is said ceramic, is exposed to said halogen-comprising plasma during said semiconductor processing. 
   
   
       25 . A method in accordance with  claim 24 , wherein underlying said ceramic is a high purity aluminum alloy. 
   
   
       26 . A method in accordance with  claim 24 , wherein said semiconductor processing apparatus is a solid ceramic semiconductor processing apparatus.