US2008261035A1PendingUtilityA1
Transparent substrate coated with at least one thin layer
Est. expiryJul 21, 2017(expired)· nominal 20-yr term from priority
C03C 17/3626C03C 17/366Y10T428/31612C03C 17/3644C03C 17/3639Y10T428/265C03C 17/3435C03C 17/3652C03C 17/3642C03C 17/3618C03C 17/36C03C 17/3681
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Claims
Abstract
A transparent glass substrate ( 1, 1′, 1 ″) coated with one or more thin layers ( 6, 16, 28 ) is disclosed, wherein the thin layer most distant from the glass substrate is a composition comprising silicon nitride, carbonitride, oxynitride or oxycarbonitride, said thin layer most distant from the glass substrate being covered by a second layer ( 7, 17 ) which protects against high-temperature corrosion.
Claims
exact text as granted — not AI-modified1 . A transparent glass substrate ( 1 , 1 ′, 1 ″) coated with one or more thin layers ( 6 , 16 , 28 ), wherein the thin layer most distant from the glass substrate is a composition comprising silicon nitride, said thin layer most distant from the glass substrate being covered by a second layer ( 7 , 17 ) which protects against high-temperature corrosion, wherein the composition comprising silicon nitride forms part of a stack of thin layers and is deposited on top of at least one functional layer ( 4 , 10 , 14 , 20 and 25 ) having thermal properties or having electrically-conductive properties which comprises a metal, a metal-nitride, a doped-metal-oxide, or mixtures thereof.
2 . The substrate according to claim 1 , wherein the second layer ( 7 , 17 ) is deposited in the form of a metal or in the form of a metal oxide which is substoichiometric in terms of oxygen, and is intended to be completely oxidized during a subsequent heat treatment.
3 . The substrate according to claim 2 , wherein the second layer has a thickness of at most 10 nm.
4 . The substrate according to claim 1 , wherein the second layer ( 7 , 17 ) is a metal oxycarbide or oxynitride.
5 . The substrate according to claim 4 , wherein the second layer has a thickness of at most 20 nm.
6 . The substrate according to claim 1 , wherein the second layer ( 7 , 17 ) comprises at least one metal whose oxide is capable of blocking or absorbing corrosive species comprising Na 2 0 at high temperature.
7 . The substrate according to claim 1 , wherein said functional layer ( 4 , 10 , 14 , 20 , 25 ) comprises a metal.
9 . The substrate according to claim 1 , wherein said functional layer ( 4 , 10 , 14 , 20 , 25 ) comprises a metal-nitride.
10 . The substrate according to claim 1 , wherein said functional layer ( 4 , 10 , 14 , 20 , 25 ) comprises a doped-metal-oxide.
11 . The substrate according to claim 7 , wherein the substrate is provided with a stack of thin layers comprising at least one silver-based layer ( 4 ) deposited, between an inner dielectric coating ( 2 , 3 ) and an outer dielectric coating ( 6 ) wherein said outer dielectric coating comprises the silicon nitride layer ( 6 ).
12 . The substrate according to claim 1 , wherein the stack of thin layers comprises at least two functional layers.
13 . The substrate according to claim 1 , wherein the second layer is effective to protect against high-temperature corrosion to prevent deterioration of the thin layer most distant from the glass substrate during heat treatments for bending or toughening in an atmosphere containing corrosive species
14 . The substrate according to claim 6 , wherein the metal is selected from the group consisting of Nb, Sn, Ta, Ti, Zr, and mixtures thereof.
15 . The substrate according to claim 7 , wherein the metal is selected from the group consisting of silver, gold, aluminum, nickel, chromium, stainless steel, and mixtures thereof.
16 . The substrate according to claim 8 , wherein the metal-nitride is selected from the group consisting of TiN, CrN, NbN, ZrN, and mixtures thereof.
17 . The substrate according to claim 9 wherein the doped-metal-oxide is selected from the group consisting of ITO, F:Sn02, In:ZnO, F:ZnO, Al:ZnO, Sn:ZnO, and mixtures thereof.
18 . The substrate according to claim 3 , wherein the second layer has a thickness of between 1 and 5 nm.
19 . The substrate according to claim 5 , wherein the layer ( 7 , 17 ) deposited in the form of a metal oxide, oxycarbide or oxynitride has a thickness of between 2 and 10 nm.
20 . The substrate according to claim 1 , wherein the thin layer most distant from the glass substrate is a composition consisting essentially of silicon carbonitride.
21 . The substrate according to claim 1 , wherein the thin layer most distant from the glass substrate is a composition consisting essentially of silicon oxynitride.
22 . The substrate according to claim 1 , wherein the thin layer most distant from the glass substrate is a composition consisting essentially of silicon oxycarbonitride.Join the waitlist — get patent alerts
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