Substrate processing method

Abstract

In a substrate processing method of polishing a periphery of a substrate, in a state where a first polishing surface to which abrasive grains that include particles having a chemical effect on an oxide-silicon-series or nitride-silicon-series film as a main component have been fixed is brought into contact with the periphery of a semiconductor substrate, polishing the periphery of the substrate by sliding the substrate and the first polishing surface. Moreover, in a state where a second polishing surface to which abrasive grains mainly having a mechanical effect have been fixed is brought into contact with the periphery of the substrate, polishing the periphery of the substrate by sliding the substrate and the second polishing surface.

1 . A substrate processing method of polishing a periphery of a substrate, comprising:
 in a state where a first polishing surface to which abrasive grains that include particles having a chemical effect on an oxide-silicon-series or nitride-silicon-series film as a main component have been fixed is brought into contact with the periphery of a semiconductor substrate, polishing the periphery of the substrate by sliding the substrate and the first polishing surface; and   in a state where a second polishing surface to which abrasive grains mainly having a mechanical effect have been fixed is brought into contact with the periphery of the substrate, polishing the periphery of the substrate by sliding the substrate and the second polishing surface.   
   
   
       2 . The substrate processing method according to  claim 1 , wherein the abrasive grains fixed to the first polishing surface include ceria as a main component and the abrasive grains fixed to the second polishing surface include diamond or SiC as a main component. 
   
   
       3 . The substrate processing method according to  claim 1 , wherein polishing with the first polishing surface and polishing with the second polishing surface are performed in parallel by rotating the substrate and, at the same time, bringing both the first polishing surface and the second polishing surface into contact with the periphery of the substrate. 
   
   
       4 . The substrate processing method according to  claim 1 , wherein polishing with the first polishing surface is followed by polishing with the second polishing surface while rotating the substrate. 
   
   
       5 . The substrate processing method according to  claim 1 , wherein polishing with the first polishing surface and polishing with the second polishing surface are alternately performed while rotating the substrate. 
   
   
       6 . The substrate processing method according to  claim 1 , wherein the substrate is Si. 
   
   
       7 . The substrate processing method according to  claim 1 , wherein the periphery of the substrate is a bevel part where the cross section has a curvature at an end of the substrate or a notch part provided on a part of the periphery of the substrate. 
   
   
       8 . The substrate processing method according to  claim 1 , wherein an unnecessary film and needle-like projections at the periphery of the substrate are removed by polishing with the first polishing surface and by polishing with the second polishing surface. 
   
   
       9 . The substrate processing method according to  claim 8 , wherein the unnecessary film is SiO 2 , SiN, SiOC, or SiCN. 
   
   
       10 . The substrate processing method according to  claim 1 , wherein an oxide-silicon-series or nitride-silicon-series film and a silicon-series film, a carbon film, a metal film, or metal silicide film at the periphery of the substrate are removed by polishing with the first polishing surface and by polishing with the second polishing surface. 
   
   
       11 . The substrate processing method according to  claim 1 , wherein the first polishing surface is the surface of a first polishing tape and the second polishing surface is the surface of a second polishing tape and each of the polishing tapes is pressed by a polishing head against the semiconductor substrate. 
   
   
       12 . A substrate processing method of polishing a periphery of a substrate, comprising:
 polishing the periphery of a semiconductor substrate using a first polishing liquid that includes abrasive grains having a chemical effect on an oxide-silicon-series or nitride-silicon-series film as a main component; and   polishing the periphery of the semiconductor substrate using a second polishing liquid that includes abrasive grains mainly having a mechanical effect.   
   
   
       13 . The substrate processing method according to  claim 12 , wherein the polishing using the first and second polishing liquids is such that a polishing surface is brought into contact with the periphery of the substrate and, at the same time, each of the first and second polishing liquids is supplied to the contact part between the periphery of the substrate and the polishing surface. 
   
   
       14 . The substrate processing method according to  claim 12 , wherein the first polishing liquid includes abrasive grains having ceria as a main component and the second polishing liquid includes abrasive grains having diamond or SiC as a main component. 
   
   
       15 . The substrate processing method according to  claim 12 , wherein an unnecessary film and needle-like projections at the periphery of the substrate are removed by polishing with the first polishing liquid and by polishing with the second polishing liquid. 
   
   
       16 . A substrate processing method of polishing a periphery of a substrate, comprising:
 polishing the periphery of a semiconductor substrate using fixed or free abrasive grains that include particles having a chemical effect on an oxide-silicon-series or nitride-silicon-series film as a main component; and   polishing the periphery of the semiconductor substrate using fixed or free abrasive grains mainly having a mechanical effect.   
   
   
       17 . The substrate processing method according to  claim 16 , wherein the abrasive grains that include particles having a chemical effect as a main component include ceria as a main component and the abrasive grains mainly having a mechanical effect include diamond or SiC as a main component. 
   
   
       18 . The substrate processing method according to  claim 17 , wherein an unnecessary film and needle-like projections at the periphery of the substrate are removed by polishing with the abrasive grains that include ceria as a main component and by polishing with the abrasive grains that include diamond or SiC as a main component. 
   
   
       19 . The substrate processing method according to  claim 16 , wherein the substrate is Si. 
   
   
       20 . The substrate processing method according to  claim 16 , wherein the periphery of the substrate is a bevel part where the cross section has a curvature at an end of the substrate or a notch part provided on a part of the periphery of the substrate.