Electronic device and manufacturing method of the same

Abstract

A technique that makes it possible to enhance the reliability of a module using PCB as its module substrate is provided. Solder connection of a single-chip component 43 , an integrated chip component 44 , and a semiconductor chip IC 2 by Pb-free solder is carried out by heat treatment at a temperature below 280° C. using a heat block. Solder connection of a semiconductor chip IC 1 by high-melting point solder is carried out by heat treatment at a temperature of 280° C. or higher using a hot jet. Thus, the semiconductor chip IC 1 can be solder connected to PCB 38 using high-melting point solder without the following troubles: damage to the PCB 38 due to heat, for example, burning of solder resist; and peeling of prepreg from a core material. Therefore, the semiconductor chip IC 1 can be mounted over the PCB 38 with high connection strength.

1 . An electronic device having a power amplifier circuit, comprising:
 a first wiring board formed of resin;   an active component that is mounted over the main surface of the first wiring board, and comprises the power amplifier circuit; and   a passive component mounted over the main surface of the first wiring board,   wherein an electrode is formed on the back side of the active component,   wherein a first substrate-side terminal is formed over the main surface of the first wiring board, and   wherein an electrode on the back side of the active component and a first substrate-side terminal of the first wiring board are connected with each other by first solder containing lead.   
     
     
         2 . The electronic device according to  claim 1 ,
 wherein the first solder melts at a temperature of 280° C. or higher.   
     
     
         3 . The electronic device according to  claim 1 ,
 wherein the passive component has a connecting terminal,   wherein a second substrate-side terminal is formed over the main surface of the first wiring board, and   wherein the connecting terminal of the passive component and the second substrate-side terminal of the first wiring board are connected with each other by second solder containing no lead.   
     
     
         4 . The electronic device according to  claim 3 ,
 wherein the connecting terminal of the passive component is a bump electrode.   
     
     
         5 . The electronic device according to  claim 3 , further comprising:
 the active component and a sealing portion that covers the passive component,   wherein the sealing portion is sealed with resin under reduced pressure.   
     
     
         6 . The electronic device according to  claim 5 ,
 wherein the modulus of elasticity of the resin is 2 GPa or below at a temperature of 180° C. or higher.   
     
     
         7 . The electronic device according to  claim 5 ,
 wherein the resin is epoxy resin.   
     
     
         8 . The electronic device according to  claim 1 ,
 wherein the electronic device is mounted over a second wiring board having an electrode over the main surface thereof,   wherein an external connection electrode is formed on the back side of the first wiring board,   wherein the electrode of the second wiring board and the external connection electrode of the first wiring board are connected with each other through third solder, and   wherein the melting temperature of the first solder is higher than the melting temperature of the third solder.   
     
     
         9 . The electronic device according to  claim 1 ,
 wherein the electronic device is mounted over a second wiring board having an electrode over the main surface thereof,   wherein an external connection electrode is formed on the back side of the first wiring board,   wherein the electrode of the second wiring board and the external connection electrode of the first wiring board are connected with each other through third solder, and   wherein the melting temperature of the second solder is lower than the melting temperature of the third solder.   
     
     
         10 . The electronic device according to  claim 9 ,
 wherein a quantity of the third solder consumed is larger than a quantity of the second solder consumed.   
     
     
         11 . The electronic device according to  claim 1 ,
 wherein the power amplifier circuit is mounted in mobile communication equipment.   
     
     
         12 . The electronic device according to  claim 11 ,
 wherein the power amplifier circuit operates in the 800 MHz band, 900 MHz band, 1800 MHz band, or 1900 MHz band.   
     
     
         13 .- 19 . (canceled)