Method of manufacturing a coaxial trace in a surrounding material, coaxial trace formed thereby, and semiconducting material containing same

Abstract

A method of manufacturing a coaxial trace ( 100 ) within a surrounding material ( 190 ) includes: providing a first substrate ( 191, 410 ) and a second substrate ( 192, 1010 ) composed of the surrounding material; forming a first portion ( 101, 601 ) of the coaxial trace in the first substrate; forming a second portion ( 102, 1001 ) of the coaxial trace in the second substrate; aligning the first portion of the coaxial trace with the second portion of the coaxial trace; and bonding the first portion of the coaxial trace to the second portion of the coaxial trace.

1 - 22 . (canceled) 
   
   
       23 . A semiconducting substrate comprising:
 a first section containing a first portion of a coaxial trace; and   a second section containing a second portion of the coaxial trace.   
   
   
       24 . The semiconducting substrate of  claim 23  wherein:
 the first portion of the coaxial trace comprises:
 a first electrically insulating layer; 
 a first seed layer interior to the first electrically insulating layer; 
 a first electrically conducting layer interior to the first seed layer; 
 a second electrically insulating layer interior to the first electrically conducting layer; 
 a second seed layer interior to the second electrically insulating layer; and 
 a second electrically conducting layer interior to the second seed layer; and 
   the second portion of the coaxial trace comprises:
 a third electrically insulating layer; 
 a third electrically conducting layer interior to the third electrically insulating layer; 
 a fourth electrically insulating layer interior to the third electrically conducting layer; and 
 a fourth electrically conducting layer interior to the third electrically insulating layer. 
   
   
   
       25 . The semiconducting substrate of  claim 24  wherein:
 the first portion of the coaxial trace comprises a first half of the coaxial trace; and   the second portion of the coaxial trace comprises a second half of the coaxial trace.   
   
   
       26 . The semiconducting substrate of  claim 24  wherein:
 the second section is over the first section; and   the first section and the second section are bonded to each other.   
   
   
       27 . A coaxial trace comprising:
 a first layer of electrically insulating material;   a first seed layer interior to the first layer of electrically insulating material;
 a first layer of electrically conducting material interior to the first seed layer; 
 a second layer of electrically insulating material interior to the first layer of electrically conducting material; 
 a second seed layer interior to the second layer of electrically insulating material; and 
 a second layer of electrically conducting material interior to the second seed layer, 
 wherein:
 the coaxial trace is embedded within a silicon substrate. 
 
   
   
   
       28 . The coaxial trace of  claim 27  wherein:
 the first layer of electrically insulating material and the second layer of electrically insulating material comprise silicon dioxide.   
   
   
       29 . The coaxial trace of  claim 28  wherein:
 the first layer of electrically conducting material and the second layer of electrically conducting material comprise copper.   
   
   
       30 . The coaxial trace of  claim 29  wherein:
 the first seed layer and the second seed layer comprise a material selected from the group consisting of titanium, titanium nitride, tantalum, tantalum nitride, and tungsten.   
   
   
       31 . The coaxial trace of  claim 29  wherein:
 the silicon substrate comprises a first section and a second section that are bonded to each other; and   the first section contains a first portion of the coaxial trace and the second section contains a second portion of the coaxial trace.