US2008248602A1PendingUtilityA1

Light emitting device processes

Assignee: LUMINUS DEVICES INCPriority: Jul 22, 2004Filed: Mar 17, 2008Published: Oct 9, 2008
Est. expiryJul 22, 2024(expired)· nominal 20-yr term from priority
H10P 90/1914H10H 20/018
52
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Claims

Abstract

Light-emitting devices, and related components, processes, systems and methods are disclosed.

Claims

exact text as granted — not AI-modified
1 . A method of forming light emitting devices comprising:
 providing a plurality of multi-layer stacks including a substrate, a sacrificial layer, and a light generating region, wherein the multi-layer stacks have a side of at least 1 mm;   bonding the multi-layer stacks to a submount;   removing the substrate, in part, by exposing the sacrificial layer of the multi-layer stacks to electromagnetic radiation; and   forming respective light emitting devices from the multi-layer stacks.   
   
   
       2 . The method of  claim 1 , wherein the electromagnetic radiation decomposes the sacrificial layer of the multi-layer stacks. 
   
   
       3 . The method of  claim 1 , wherein the light emitting devices have a side of at least 1 mm. 
   
   
       4 . The method of  claim 1 , wherein at least 50% of the total amount of light generated by the light-generating region that emerges from the light emitting devices is emitted through an upper surface of the multi-layer stacks. 
   
   
       5 . The method of  claim 1 , comprising simultaneously exposing the sacrificial layer of the multi-layer stacks to electromagnetic radiation. 
   
   
       6 . The method of  claim 1 , comprising sequentially exposing the sacrificial layer of the multi-layer stacks to electromagnetic radiation. 
   
   
       7 . The method of  claim 1 , further comprising disposing a phosphor material layer over an upper surface of the multi-layer stacks. 
   
   
       8 . The method of  claim 7 , wherein the phosphor material layer is compressed. 
   
   
       9 . The method of  claim 7 , wherein the phosphor material layer has a thickness uniformity of less than about 20%. 
   
   
       10 . The method of  claim 1 , wherein the sacrificial layer comprises a semiconductor material. 
   
   
       11 . The method of  claim 1 , wherein the electromagnetic radiation passes through the substrate and is absorbed by the sacrificial layer.

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