Magnetic memory arrays

Abstract

A magnetic memory array. A first bit line provides a first writing magnetic field to a magnetic memory cell. A second bit line provides a second writing magnetic field to a reference magnetic memory cell. A word line provides a third writing magnetic field to the magnetic memory cell and a fourth writing magnetic field to the reference magnetic memory cell. The third writing magnetic field exceeds the fourth writing magnetic field.

1 . A magnetic memory array, comprising:
 a magnetic memory cell comprising a first free ferromagnetic layer, a first pinned ferromagnetic layer, a first tunnel barrier layer located between the first free ferromagnetic layer and the first pinned ferromagnetic layer, a first major axis and a first short axis, wherein the first major axis and the first short axis have a first aspect ratio;   a reference magnetic memory cell comprising a second free ferromagnetic layer, a second pinned ferromagnetic layer, a second tunnel barrier layer located between the second free ferromagnetic layer and the second pinned ferromagnetic layer, a second major axis and a second short axis, wherein the second major axis and the second short axis have a second aspect ratio exceeding the first aspect ratio;   a first bit line providing a first writing magnetic field to the magnetic memory cell;   a second bit line providing a second writing magnetic field to the reference magnetic memory cell; and   a word line providing a third writing magnetic field to the magnetic memory cell and a fourth writing magnetic field to the reference magnetic memory cell.   
   
   
       2 . The magnetic memory array as claimed in  claim 1 , wherein a first combination magnetic field of the first writing magnetic field and the third writing magnetic field is equal to a second combination magnetic field of the third writing magnetic field and the fourth writing magnetic field.