US2008237049A1PendingUtilityA1
Ion-implanted electroformed structural material and method of producing the structural material
Assignee: SUMITOMO ELECTRIC INDUSTRIESPriority: Oct 29, 2003Filed: Mar 14, 2008Published: Oct 2, 2008
Est. expiryOct 29, 2023(expired)· nominal 20-yr term from priority
C25D 1/00C23C 14/48C25D 5/48H01J 37/3171
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Claims
Abstract
An ion-implanted electroformed structural material is made of an electroformed body formed by electroforming and has an ion-implanted layer formed by implanting ions into the electroformed body. In the electroformed structural material, the microstructure is modulated at a position deeper than the ion-implanted layer, and the hardness becomes higher than that of the original electroformed body even at a position deeper than the ion-implanted layer.
Claims
exact text as granted — not AI-modified1 - 6 . (canceled)
7 . A method of producing an ion-implanted electroformed structural material, the method comprising the steps of:
(a) forming an electroformed body; and (b) implanting accelerated ions into the electroformed body.
8 . A method of producing an ion-implanted electroformed structural material as defined by claim 7 , wherein in the step of forming an electroformed body, the electroformed body is formed such that it has an average crystal-grain diameter of at most 1 μm.
9 . A method of producing an ion-implanted electroformed structural material as defined by claim 7 , wherein in the step of forming an electroformed body, a pulse-shaped voltage is applied.
10 . A method of producing an ion-implanted electroformed structural material as defined by claim 7 , wherein in the step of implanting ions into the electroformed body, the ions are implanted in a region ranging from the surface to a depth of at most 5 μm to increase the hardness of a portion deeper than the region.
11 . A method of producing an ion-implanted electroformed structural material as defined by claim 7 , wherein in the step of implanting ions into the electroformed body, the ions are implanted in a region ranging from the surface to a depth of at most 5 μm to modulate the structure of a portion deeper than the region.
12 . A method of producing an ion-implanted electroformed structural material as defined by claim 7 , wherein in the step of implanting ions into the electroformed body, the temperature of the electroformed body is maintained at most one-third the melting point (expressed in K) of the material that forms the electroformed body.
13 . A method of producing an ion-implanted electroformed structural material as defined by claim 7 , wherein in the step of implanting ions into the electroformed body, the ions are accelerated at a voltage of at least 10 kV.
14 . A method of producing an ion-implanted electroformed structural material as defined by claim 7 , wherein in the step of implanting ions into the electroformed body, an omnidirectional plasma ion-implanting unit is used.Join the waitlist — get patent alerts
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