US2008237049A1PendingUtilityA1

Ion-implanted electroformed structural material and method of producing the structural material

Assignee: SUMITOMO ELECTRIC INDUSTRIESPriority: Oct 29, 2003Filed: Mar 14, 2008Published: Oct 2, 2008
Est. expiryOct 29, 2023(expired)· nominal 20-yr term from priority
C25D 1/00C23C 14/48C25D 5/48H01J 37/3171
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Claims

Abstract

An ion-implanted electroformed structural material is made of an electroformed body formed by electroforming and has an ion-implanted layer formed by implanting ions into the electroformed body. In the electroformed structural material, the microstructure is modulated at a position deeper than the ion-implanted layer, and the hardness becomes higher than that of the original electroformed body even at a position deeper than the ion-implanted layer.

Claims

exact text as granted — not AI-modified
1 - 6 . (canceled) 
     
     
         7 . A method of producing an ion-implanted electroformed structural material, the method comprising the steps of:
 (a) forming an electroformed body; and   (b) implanting accelerated ions into the electroformed body.   
     
     
         8 . A method of producing an ion-implanted electroformed structural material as defined by  claim 7 , wherein in the step of forming an electroformed body, the electroformed body is formed such that it has an average crystal-grain diameter of at most 1 μm. 
     
     
         9 . A method of producing an ion-implanted electroformed structural material as defined by  claim 7 , wherein in the step of forming an electroformed body, a pulse-shaped voltage is applied. 
     
     
         10 . A method of producing an ion-implanted electroformed structural material as defined by  claim 7 , wherein in the step of implanting ions into the electroformed body, the ions are implanted in a region ranging from the surface to a depth of at most 5 μm to increase the hardness of a portion deeper than the region. 
     
     
         11 . A method of producing an ion-implanted electroformed structural material as defined by  claim 7 , wherein in the step of implanting ions into the electroformed body, the ions are implanted in a region ranging from the surface to a depth of at most 5 μm to modulate the structure of a portion deeper than the region. 
     
     
         12 . A method of producing an ion-implanted electroformed structural material as defined by  claim 7 , wherein in the step of implanting ions into the electroformed body, the temperature of the electroformed body is maintained at most one-third the melting point (expressed in K) of the material that forms the electroformed body. 
     
     
         13 . A method of producing an ion-implanted electroformed structural material as defined by  claim 7 , wherein in the step of implanting ions into the electroformed body, the ions are accelerated at a voltage of at least 10 kV. 
     
     
         14 . A method of producing an ion-implanted electroformed structural material as defined by  claim 7 , wherein in the step of implanting ions into the electroformed body, an omnidirectional plasma ion-implanting unit is used.

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