Method to cool bake plates in a track lithography tool

Abstract

A method of reducing a temperature of a bake plate within a semiconductor processing tool includes (a) providing a substrate and (b) transferring the substrate to a position adjacent the bake plate. The bake plate is characterized by an initial bake plate temperature greater than a set point temperature. The method also includes (c) reducing the temperature of the bake plate by a first predetermined amount and (d) transferring the substrate from the position adjacent the bake plate to a position adjacent a chill plate. The chill plate is characterized by a chill plate temperature less than the set point temperature. The method further includes (e) transferring the substrate from the position adjacent the chill plate to the position adjacent the bake plate, (f) reducing the temperature of the bake plate by a second predetermined amount, (g) monitoring the temperature of the bake plate, and (h) repeating steps (d) through (g) until the bake plate temperature is within a predetermined tolerance of the set point temperature.

1 . A method of reducing a temperature of a bake plate within a semiconductor processing tool, the method comprising:
 (a) providing a substrate;   (b) transferring the substrate to a position adjacent the bake plate, wherein the bake plate is characterized by an initial bake plate temperature greater than a set point temperature;   (c) reducing the temperature of the bake plate by a first predetermined amount;   (d) transferring the substrate from the position adjacent the bake plate to a position adjacent a chill plate, wherein the chill plate is characterized by a chill plate temperature less than the set point temperature;   (e) transferring the substrate from the position adjacent the chill plate to the position adjacent the bake plate;   (f) reducing the temperature of the bake plate by a second predetermined amount;   (g) monitoring the temperature of the bake plate; and   (h) repeating steps (d) through (g) until the bake plate temperature is within a predetermined tolerance of the set point temperature.   
   
   
       2 . The method of  claim 1  wherein the substrate is a silicon wafer. 
   
   
       3 . The method of  claim 1  wherein the first predetermined amount depends on the bake plate temperature. 
   
   
       4 . The method of  claim 1  wherein the first predetermined amount depends on the set point temperature. 
   
   
       5 . The method of  claim 1  wherein the first predetermined amount is different than the second predetermined amount. 
   
   
       6 . The method of  claim 1  further comprising reducing the temperature of the substrate by a third predetermined amount after transferring the substrate to the position adjacent the chill plate. 
   
   
       7 . A method of reducing a temperature of a bake plate within a track lithography tool, the method comprising:
 (a) providing a substrate;   (b) transferring the substrate to a position adjacent the bake plate, wherein the bake plate is characterized by an initial bake plate temperature greater than a set point temperature;   (c) performing a first heat transfer process for a first predetermined time period to reduce the temperature of the bake plate;   (d) transferring the substrate from the position adjacent the bake plate to a position adjacent a chill plate, wherein the chill plate is characterized by a chill plate temperature less than the set point temperature;   (e) transferring the substrate from the position adjacent the chill plate to the position adjacent the bake plate;   (f) performing a second heat transfer process for a second predetermined time period to reduce the temperature of the bake plate;   (g) monitoring the temperature of the bake plate; and   (h) repeating steps (d) through (g) until the temperature of the bake plate is within a predetermined tolerance of the set point temperature.   
   
   
       8 . The method of  claim 7  wherein a duration of the first predetermined time period depends on the bake plate temperature. 
   
   
       9 . The method of  claim 7  wherein a duration of the first predetermined time period depends on the set point temperature. 
   
   
       10 . The method of  claim 7  where the duration of the first predetermined time period is different than the duration of the second predetermined time period. 
   
   
       11 . The method of  claim 7  wherein the substrate is a silicon wafer. 
   
   
       12 . The method of  claim 7  further comprising performing a third heat transfer process for a third predetermined time period to reduce the temperature of the substrate after transferring the substrate to the position adjacent the chill plate. 
   
   
       13 . The method of  claim 7  wherein the substrate in the position adjacent the bake plate is supported by proximity pins which create a gap between the substrate and the bake plate. 
   
   
       14 . A method of cooling a bake plate, the method comprising:
 (a) providing a substrate;   (b) transferring the substrate to a position adjacent the bake plate, wherein the bake plate is characterized by an initial bake plate temperature greater than a set point temperature;   (c) performing a first heat transfer process for a first predetermined time period to reduce a temperature of the bake plate;   (d) removing the substrate from the bake plate;   (e) transferring the substrate to the position adjacent the bake plate;   (f) performing a second heat transfer process for a second predetermined time period to reduce the temperature of the bake plate;   (g) monitoring the temperature of the bake plate; and   (h) repeating steps (d) through (g) until the temperature of the bake plate is within a predetermined tolerance of the set point temperature.   
   
   
       15 . The method of  claim 14  wherein a duration of the first predetermined time period depends on the bake plate temperature. 
   
   
       16 . The method of  claim 14  wherein a duration of the first predetermined time period depends on the set point temperature. 
   
   
       17 . The method of  claim 14  wherein a duration of the second predetermined time period depends on the bake plate temperature. 
   
   
       18 . The method of  claim 14  wherein determining a duration of the second predetermined time period depends on the set point temperature. 
   
   
       19 . The method of  claim 14  wherein the duration of the first predetermined time period is different than the duration of the second predetermined time period. 
   
   
       20 . The method of  claim 14  wherein the substrate is a silicon wafer.