Multiflow integrated icp source

Abstract

Different gases are separately exposed to RF energy in different zones in inlets to a processing chamber. Plasma is activated in the gases in each of the zones separately and the activated gases are then introduced into the plasma processing chamber where they may undergo mutual interaction within a processing zone. Control of the active species distribution within the processing chamber is provided by control of the energizing of the gases in the separate inlet zones before they are combined in the processing zone. An ICP source energizes gas in each zone through an antenna having one or more conductors, each of which is coupled to a plurality of the zones. This allows gases to be brought together in their active states, rather than being combined and then activated, and allows the same or different parameters to be applied in different inlet zones.

1 . A plasma processing apparatus comprising:
 a processing chamber;   a plurality of gas supplies;   a plurality of inlet zones, each communicating between the processing chamber and one or more of the gas supplies; and   an RF energy source including an RF generator and at least one antenna connected to the generator and coupled to each of the zones of the plurality of inlet zones.   
   
   
       2 . The plasma processing apparatus of  claim 1  wherein the at least one antenna includes a single conductor inductively coupled to each of the zones of the plurality. 
   
   
       3 . The plasma processing apparatus of  claim 1  wherein the at least one antenna includes at least one conductor, each inductively coupled to each of the zones of the plurality. 
   
   
       4 . The plasma processing apparatus of  claim 1  wherein the at least one antenna includes at least two conductors, each inductively coupled to each of the zones of the plurality. 
   
   
       5 . The plasma processing apparatus of  claim 1  further comprising:
 a plurality of dielectric tubes arranged in a ring, each enclosing one of the inlet zones, each zone forming a gas conductance path between one or more of the gas supplies and the processing chamber.   
   
   
       6 . The plasma processing apparatus of  claim 1  further comprising:
 a block of dielectric material having a plurality of gas passages therethrough, each forming one of the inlet zones, each zone providing a gas conductance path from one or more of the gas supplies to the processing chamber.   
   
   
       7 . The plasma processing apparatus of  claim 1  wherein:
 the plurality of inlet zones are arranged in a ring, each zone forming a conductance path for gas flowing from one or more of the gas supplies to the processing chamber; and   the at least one antenna includes a conductor surrounding each of the zones of the plurality and inductively coupled thereto so as to energize a plasma in gas flowing through each of the zones before the gas enters the processing chamber.   
   
   
       8 . The plasma processing apparatus of  claim 1  wherein:
 the plurality of inlet zones are arranged in an annular array having an opening at it's center, each zone forming a conductance path for gas flowing from one or more of the gas supplies to the processing chamber; and   the at least one antenna includes a conductor surrounding the opening in the center of the array and inductively coupled to each of the zones so as to energize a plasma in gas flowing through each of the zones before the gas enters the processing chamber.   
   
   
       9 . The plasma processing apparatus of  claim 1  wherein:
 the plurality of inlet zones are arranged in an annular array having an opening at it's center, each zone forming a conductance path for gas flowing from one or more of the gas supplies to the processing chamber; and   the at least one antenna includes at least two conductors, one conductor surrounding the opening in the center of the array and inductively coupled to each of the zones so as to energize a plasma in gas flowing through each of the zones before the gas enters the processing chamber and the other conductor surrounding the array of zones and being inductively coupled thereto so as to also energize the plasma in the gas flowing through each of the zones before the gas enters the processing chamber.   
   
   
       10 . The plasma processing apparatus of  claim 1  wherein the at least one antenna includes at least one conductor, each separately wound around each of the zones of the plurality. 
   
   
       11 . The plasma processing apparatus of  claim 1  wherein the at least one antenna includes a plurality of conductors, each separately wound around each of the zones of the plurality. 
   
   
       12 . The plasma processing apparatus of  claim 1  wherein:
 the at least one antenna includes a plurality of conductors, each wound around each of the zones of the plurality and inductively coupled thereto;   each conductor being connected in parallel across the RF generator and having a pair of end terminals, and either:
 the terminal ends of different conductors being staggered among the zones, or 
 the conductors being phased relative to each other. 
   
   
   
       13 . The plasma processing apparatus of  claim 1  wherein:
 each of the zones has a common geometry.   
   
   
       14 . The plasma processing apparatus of  claim 1  wherein:
 at least one of the zones has a geometry that differs from the geometries of another zone.