US2008230836A1PendingUtilityA1

Semiconductor device and boost circuit

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Assignee: SEIKO EPSON CORPPriority: Mar 23, 2005Filed: Apr 18, 2008Published: Sep 25, 2008
Est. expiryMar 23, 2025(expired)· nominal 20-yr term from priority
Inventors:Yoshiharu Ajiki
H10D 86/201H10D 30/6711H10D 89/215H10B 69/00
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Claims

Abstract

A semiconductor device includes a transistor that is used for a charge pump circuit, being configured with a fully depleted silicon-on-insulator transistor.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device comprising a transistor that is used for a charge pump circuit, being configured with a fully depleted silicon-on-insulator transistor. 
     
     
         2 . The semiconductor device according to  claim 1 , wherein the fully depleted silicon-on-insulator transistor includes:
 a semiconductor layer formed on an insulation layer;   a gate electrode arranged on the semiconductor layer;   a source layer formed on the semiconductor layer, arranged on one side of the gate electrode;   a drain layer formed on the semiconductor layer, arranged on the other side of the gate electrode; and   a body-source junction layer which connects a body region under the gate electrode and the source layer.

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