Organic thin-film transistor manufacturing method, organic thin-film transistor, and organic thin-film transistor sheet

Abstract

An organic thin-film transistor manufacturing method and an organic thin-film transistor manufactured by the method are disclosed, the method comprising the steps of a) forming a gate electrode on a substrate, b) forming a gate insulating layer on the substrate, c) forming an organic semiconductor layer on the substrate, d) forming an organic semiconductor layer protective layer on the organic semiconductor layer, e) removing a part of the organic semiconductor layer protective layer, and f) forming a source electrode and a drain electrode at portions where the organic semiconductor layer protective layer has been removed, so that the source electrode and drain electrode contacts the organic semiconductor layer.

1 - 16 . (canceled) 
   
   
       17 . An organic thin-film transistor comprising a substrate, a gate electrode formed on the substrate, a gate insulating layer formed on the substrate, an organic semiconductor layer formed on the substrate, a first organic semiconductor layer protective layer with a through hole formed on the organic semiconductor layer, a second organic semiconductor layer protective layer with a through hole formed on the first organic semiconductor layer protective layer, a source electrode and a drain electrode, each electrode being provided so as to contact the organic semiconductor layer through the through hole, wherein the first organic semiconductor layer protective layer contains a hydrophilic polymer and the second organic semiconductor layer protective layer contains inorganic oxides or inorganic nitrides. 
   
   
       18 . The organic thin-film transistor of  claim 17 , wherein the first organic semiconductor layer protective layer is formed so as to contact the organic semiconductor layer. 
   
   
       19 . The organic thin-film transistor of  claim 17 , wherein at least a part of the source electrode and at least a part of the drain electrode exist in the through hole. 
   
   
       20 . The organic thin-film transistor of  claim 17 , wherein the through hole comprises a first through hole and a second through hole each separated, the source electrode being provided so as to contact the organic semiconductor layer through the first hole, and the drain electrode being provided so as to contact the organic semiconductor layer through the second hole. 
   
   
       21 . The organic thin-film transistor of  claim 17 , wherein the layer formed on the organic semiconductor layer has a light transmittance of not more than 10%. 
   
   
       22 . The organic thin-film transistor of  claim 21 , wherein the organic semiconductor layer has a light transmittance of not more than 10%. 
   
   
       23 . (canceled) 
   
   
       24 . The organic thin-film transistor of  claim 17 , wherein the first or second organic semiconductor layer protective layer is formed by coating an aqueous hydrophilic polymer solution or an aqueous hydrophilic polymer dispersion. 
   
   
       25 . (canceled) 
   
   
       26 . The organic thin-film transistor of  claim 17 , wherein the source electrode is formed from a conductive paste containing metal particles, a conductive ink or a metal film precursor. 
   
   
       27 . The organic thin-film transistor of  claim 17 , wherein the drain electrode is formed from a conductive paste containing metal particles, a conductive ink or a metal film precursor. 
   
   
       28 . The organic thin-film transistor of  claim 17 , wherein the source electrode contains a conductive polymer. 
   
   
       29 . The organic thin-film transistor of  claim 17 , wherein the drain electrode contains a conductive polymer. 
   
   
       30 . The organic thin-film transistor of  claim 17 , wherein the substrate is comprised of a resin. 
   
   
       31 . An organic thin-film transistor sheet comprising two or more of the organic thin-film transistors of  claims 17 . 
   
   
       32 . The organic thin-film transistor of  claim 17 , wherein the second organic semiconductor layer protective layer is comprised of silicon oxide. 
   
   
       33 . The organic thin-film transistor of  claim 17 , wherein the second organic semiconductor layer protective layer is formed according to an atmospheric pressure plasma method.