Method of manufacturing a semiconductor device

Abstract

A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.

1 - 36 . (canceled) 
     
     
         37 . A method of manufacturing a semiconductor device comprising:
 forming a slab layer on a substrate by sequentially stacking a lower cladding layer, an active layer, and an upper cladding layer as stacked layers;   forming a pn junction surface at a predetermined angle with respect to surfaces of the stacked layers in the slab layer;   forming an ohmic contact layer for attaching an electrode, on the upper cladding layer;   forming a periodic air hole structures introducing a linear defect region serving as a waveguide, on the slab layer and the ohmic contact layer;   forming an electrode on the ohmic contact layer in each of a p-type region and an n-type region in the slab layer;   removing the ohmic contact layer; and   oxidizing an Al-containing layer in a lower portion or in both an upper portion and a lower portion of the slab layer into a dielectric layer, to form a semiconductor slab layer.   
     
     
         38 . The method according to  claim 37 , wherein
 forming a slab layer includes forming each of the active layer and the upper and lower cladding layers of n-type compound semiconductor materials, and   forming the pn junction surface includes diffusing a dopant producing p-type conductivity into a predetermined region of the slab layer.   
     
     
         39 . The method according to  claim 37 , wherein
 forming a slab layer includes forming each of the active layer and the upper and lower cladding layers of p-type compound semiconductor materials, and   forming the pn junction surface includes diffusing a dopant producing n-type conductivity into a predetermined region of the slab layer.   
     
     
         40 . The method according to  claim 37 , wherein
 forming a pn junction surface includes forming an alignment mark on the slab layer that indicates position of the pn junction, and   removing the ohmic contact layer includes removing the ohmic contact layer in a predetermined region based on the alignment mark.   
     
     
         41 . The method according to  claim 37 , wherein
 forming a pn junction surface includes forming an alignment mark on the slab layer that indicates position of the pn junction, and   forming the periodic air hole structure includes matching position of the periodic air hole structure with the alignment mark when forming the periodic air hole structure.   
     
     
         42 . The method according to  claim 37 , including forming the pn junction surface before forming the ohmic contact layer. 
     
     
         43 . The method according to  claim 37 , including forming the pn junction surface after forming the ohmic contact layer. 
     
     
         44 . The method according to  claim 37 , including forming the periodic air hole structure before removing the ohmic contact layer. 
     
     
         45 . The method according to  claim 37 , including forming the periodic air hole structure after removing the ohmic contact layer. 
     
     
         46 . A method of manufacturing a semiconductor device comprising:
 forming a slab layer on a first substrate by sequentially stacking a lower cladding layer, an active layer, and an upper cladding layer as stacked layers;   forming a pn junction surface at a predetermined angle with respect to surfaces of the stacked layers in the slab layer;   forming a periodic air hole structure introducing a linear defect region serving as a waveguide, on the slab layer;   removing a lower portion or an upper portion and a lower portion of the slab layer, to form a semiconductor slab layer;   fusing a second substrate, prepared separately from the first substrate, to the first substrate; and   forming an electrode in a p-type region and an n-type region on the second substrate that has been fused to the first substrate.   
     
     
         47 . The method according to  claim 46 , further comprising:
 forming an ohmic contact layer for attaching the electrode, on the upper cladding layer, and   forming the pn junction surface before forming the ohmic contact layer.   
     
     
         48 . The method according to  claim 46 , further comprising forming an ohmic contact layer for attaching the electrode, on the upper cladding layer, and
 forming the pn junction surface after forming the ohmic contact layer.   
     
     
         49 . The method according to  claim 46 , further comprising
 forming an ohmic contact layer for attaching the electrode, on the upper cladding layer, and   forming the periodic air hole structure before removing the ohmic contact layer.   
     
     
         50 . The method according to  claim 46 , further comprising
 forming an ohmic contact layer for attaching the electrode, on the upper cladding layer, and   forming the periodic air hole structure after removing the ohmic contact layer.   
     
     
         51 . The method according to  claim 46 , further comprising forming an ohmic contact layer for attaching the electrode, on a lower portion of the lower cladding layer. 
     
     
         52 . A method of manufacturing a semiconductor device comprising:
 forming a slab layer on a substrate by sequentially stacking a lower cladding layer, an active layer, and an upper cladding layer as stacked layers;   forming an ohmic contact layer for attaching an electrode, on the upper cladding layer;   forming a periodic air hole structure introducing a linear defect region serving as a waveguide, on the slab layer and the ohmic contact layer;   forming a pn junction surface at a predetermined angle with respect to surfaces of the stacked layers in the slab layer;   forming an electrode on the ohmic contact layer in each of a p-type region and an n-type region in the slab layer;   removing the ohmic contact layer; and   removing an interior portion of the substrate, so the substrate is hollow, to form the sheet-like slab layer.   
     
     
         53 . The method according to  claim 52 , including forming the periodic air hole structure before removing the ohmic contact layer. 
     
     
         54 . The method according to  claim 52 , including forming the periodic air hole structure after removing the ohmic contact layer.