Substrate processing apparatus, substrate processing method and storage medium

Abstract

A substrate processing apparatus includes: a gas supply mechanism supplying gas containing a halogen element and basic gas into a process chamber; and a first temperature adjusting member and a second temperature adjusting member adjusting a temperature of the substrate in the process chamber, wherein the second temperature adjusting member adjusts the temperature of the substrate to a higher temperature than the first temperature adjusting member.

1 . A substrate processing apparatus removing an oxide film on a surface of a substrate by chemical processing and heat treatment, the apparatus comprising:
 a gas supply mechanism supplying gas containing a halogen element and basic gas into a process chamber; and   a first temperature adjusting member and a second temperature adjusting member adjusting a temperature of the substrate in the process chamber,   wherein said second temperature adjusting member adjusts the temperature of the substrate to a higher temperature than said first temperature adjusting member.   
   
   
       2 . The substrate processing apparatus according to  claim 1 ,
 wherein the inside of the process chamber is airtightly closable.   
   
   
       3 . The substrate processing apparatus according to  claim 1 , further comprising
 an exhaust mechanism exhausting the inside of the process chamber.   
   
   
       4 . The substrate processing apparatus according to  claim 1 , further comprising
 a support member supporting the substrate in the process chamber,   wherein said second temperature adjusting member is thermally in contact with said support member, and said first temperature adjusting member is capable of thermally coming into contact with and separating from said support member.   
   
   
       5 . The substrate processing apparatus according to  claim 4 ,
 wherein a rear surface of said support member is exposed to an external part of the process chamber, and said first temperature adjusting member is capable of thermally coming into contact with or separating from the rear surface of said support member, in the external part of the process chamber.   
   
   
       6 . The substrate processing apparatus according to  claim 4 ,
 wherein a rear surface of said support member is covered by said second temperature adjusting member, and said first temperature adjusting member comes into contact with said second temperature adjusting member.   
   
   
       7 . The substrate processing apparatus according to  claim 4 ,
 wherein said second temperature adjusting member is buried in said support member, and said first temperature adjusting member comes into contact with said support member.   
   
   
       8 . The substrate processing apparatus according to  claim 4 ,
 wherein total heat capacity of said support member and said second temperature adjusting member is smaller than heat capacity of said first temperature adjusting member.   
   
   
       9 . The substrate processing apparatus according to  claim 1 ,
 wherein said first temperature adjusting member is a mounting table on which the substrate is placed in the process chamber, and the apparatus further comprising   a lifter mechanism lifting up the substrate from the mounting table in the process chamber,   wherein the temperature of the substrate which has been lifted up from said mounting table by said lifter mechanism is adjusted by said second temperature adjusting member.   
   
   
       10 . The substrate processing apparatus according to  claim 9 , further comprising
 a partition member disposed around the substrate which has been lifted up from said mounting table by said lifter mechanism;   a first exhaust mechanism exhausting the inside of the process chamber above said partition member; and   a second exhaust mechanism exhausting the inside of the process chamber under said partition member.   
   
   
       11 . The substrate processing apparatus according to  claim 9 ,
 wherein said gas supply mechanism supplies the gas containing the halogen element and the basic gas to the inside of the process chamber above the substrate which has been lifted up from said mounting table by said lifter mechanism.   
   
   
       12 . A substrate processing method of removing an oxide film on a surface of a substrate by chemical processing and heat treatment, the method comprising the steps of:
 supplying gas containing a halogen element and basic gas to the inside of a process chamber and adjusting a temperature of the substrate by a first temperature adjusting member, thereby turning the oxide film on the surface of the substrate into a reaction product; and   adjusting the temperature of the substrate to a higher temperature by the second temperature adjusting member than the first temperature adjusting member, thereby vaporizing the reaction product.   
   
   
       13 . The substrate processing method according to  claim 12 ,
 wherein the inside of the process chamber is exhausted.   
   
   
       14 . The substrate processing method according to  claim 12 ,
 wherein the substrate is supported by a support member including the second temperature adjusting member, and   wherein, in said step of turning the oxide film on the surface of the substrate into the reaction product, the first temperature adjusting member is brought into thermal contact with the support member, and   wherein, in said step of vaporizing the reaction product, the first temperature adjusting member is thermally separated from the support member.   
   
   
       15 . The substrate processing method according to  claim 14 ,
 wherein the first temperature adjusting member is thermally brought into contact with or separated from the support member, in an external part of the process chamber.   
   
   
       16 . The substrate processing method according to  claim 14 ,
 wherein total heat capacity of the support member and the second temperature adjusting member is smaller than heat capacity of the first temperature adjusting member.   
   
   
       17 . The substrate processing method according to  claim 12 ,
 wherein, in said step of turning the oxide film on the surface of the substrate into the reaction product, the temperature of the substrate is adjusted while the substrate is placed on a mounting table as the first temperature adjusting member, and   wherein, in said step of vaporizing the reaction product, the temperature of the substrate is adjusted by the second temperature adjusting member while the substrate is lifted up from the mounting table in the process chamber.   
   
   
       18 . A storage medium containing a recorded program executable by a control unit of a substrate processing apparatus,
 the program causing the substrate processing apparatus to perform the substrate processing method according to  claim 12  when executed by the control unit.