US2008220597A1PendingUtilityA1

Photoresists and methods for use thereof

Assignee: ROHM & HAAS ELECT MATPriority: Apr 9, 2003Filed: Oct 31, 2007Published: Sep 11, 2008
Est. expiryApr 9, 2023(expired)· nominal 20-yr term from priority
G03F 7/0392G03F 7/40G03F 7/0397G03F 7/16G03F 7/405
54
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Claims

Abstract

New photoresists are provided that can be applied and imaged with reduced undesired outgassing and/or as thick coating layers. Preferred resists of the invention are chemically-amplified positive-acting resists that contain photoactive and resin components.

Claims

exact text as granted — not AI-modified
1 - 19 . (canceled) 
   
   
       20 . A method for providing an ion-implanted semiconductor substrate comprising:
 providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,   wherein the photoresist comprises, prior to photoactivation, a resin that comprises units that contain photoacid-labile moieties in an amount of 12 mole percent or less, based on total units of the resin; and   applying ions to the substrate.   
   
   
       21 . A method for providing an ion-implanted semiconductor substrate comprising:
 providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,   wherein the photoresist comprises, prior to photoactivation, photoacid-labile groups that generate upon photoactivation a cleavage product that comprises 5 or more carbon atoms and/or a single or multiple ring structure; and   applying ions to the substrate.   
   
   
       22 . A method for providing an ion-implanted semiconductor substrate comprising:
 providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,   treating the photoresist composition image thermally or with radiation to remove volatile materials of the photoresist composition; and   applying ions to the substrate.   
   
   
       23 . A method for providing an ion-implanted semiconductor substrate comprising:
 providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,   treating the photoresist composition image to provide a coating thereon; and   applying ions to the substrate.

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