Zeolite - carbon doped oxide composite low k dielectric

Abstract

A method for forming a zeolite-carbon doped oxide (CDO) composite dielectric material is herein described. Zeolite particles may be dispersed in a solvent. The zeolite solvent solution may then be deposited on an underlying layer, such as a wafer or other dielectric layer. At least some solvent may then be removed to form a zeolite film. A CDO may then be deposited in the zeolite film to form a zeolite-CDO composite film/dielectric. The Zeolite-CDO composite film/dielectric may then be calcinated to form a solid phase zeolite-CDO composite dielectric.

1 .- 24 . (canceled) 
   
   
       25 . An interconnect structure comprising:
 at least a via opening and a trench opening defined by a carbon doped oxide (CDO)-zeolite composite dielectric layer, which is disposed above an underlying layer;   a barrier layer disposed on the surfaces of the carbon doped oxide (CDO)-zeolite composite dielectric layer; and   conductive material disposed in the via opening and the trench opening.   
   
   
       26 . The interconnect structure of  claim 25 , wherein the CDO is a silicon oxide. 
   
   
       27 . The interconnect structure of  claim 25 , wherein the barrier layer comprises tantalum. 
   
   
       28 . The interconnect structure of  claim 25 , wherein the conductive material comprises a copper alloy. 
   
   
       29 . The interconnect structure of  claim 25 , wherein the underlying layer is a wafer. 
   
   
       30 . The interconnect structure of  claim 25 , wherein the underlying layer includes a second CDO-zeolite composite dielectric layer. 
   
   
       31 . An interconnect structure comprising:
 a first dielectric layer including a carbon doped oxide (CDO)-zeolite composite material, wherein a conductive material is disposed in an opening of the first dielectric layer; and   a second dielectric layer including a CDO-zeolite composite material disposed on the first dielectric layer, wherein a conductive material is disposed in an opening of the second dielectric layer; the conductive material disposed in the opening of the second dielectric to make electrical connection with the conductive material disposed in the opening of the first dielectric layer.   
   
   
       32 . The interconnect structure of  claim 31 , wherein the conductive material includes a copper alloy. 
   
   
       33 . The interconnect structure of  claim 31 , further comprising a first barrier layer disposed between the conductive material, which is disposed in an opening of the first dielectric layer, and surfaces of the first dielectric layer; and a second barrier layer disposed between the conductive material, which is disposed in an opening of the second dielectric layer, and the surfaces of the second dielectric layer. 
   
   
       34 . The interconnect structure of  claim 33 , wherein the barrier layer includes tantalum. 
   
   
       35 . The interconnect structure of  claim 31 , wherein the first and the second dielectric layers are disposed above an underlying active substrate layer.