Sputtering system
Abstract
A sputtering system including a vacuum chamber, at least one cathode located in said vacuum chamber, a first gas introduction mechanism for supplying a gas along a surface of the cathode, which first gas introduction mechanism is located in the vacuum chamber and provided through the at least one cathode, a second gas introduction mechanism for supplying a gas along a surface of the at least one cathode, which second gas introduction mechanism is located in the vacuum chamber and provided around the at least one cathode, a third gas introduction mechanism for supplying a gas into the vacuum chamber, which third gas introduction mechanism has gas supply inlets positioned at a location radially outside of said second gas introduction mechanism and above said at least one cathode, and a vacuum evacuation unit for evacuating the inside of said vacuum chamber.
Claims
exact text as granted — not AI-modified1 . A sputtering system comprising:
a vacuum chamber, at least one cathode located in said vacuum chamber, a first gas introduction mechanism for supplying a gas along a surface of said cathode, which first gas introduction mechanism is located in said vacuum chamber and provided through said at least one cathode, a second gas introduction mechanism for supplying a gas along a surface of said at least one cathode, which second gas introduction mechanism is located in said vacuum chamber and provided around said at least one cathode, a third gas introduction mechanism for supplying a gas into said vacuum chamber, which third gas introduction mechanism has gas supply inlets positioned at a location radially outside of said second gas introduction mechanism and above said at least one cathode, and a vacuum evacuation unit for evacuating the inside of said vacuum chamber.
2 . The sputtering system as claimed in claim 1 , wherein said first gas introduction mechanism has a gas passage which penetrates said at least one cathode and is formed to open on the surface of said at least one cathode, and a dispersion member located above the opening of said gas passage on the surface of said cathode and projected toward said at least one cathode.
3 . The sputtering system as claimed in claim 1 , further comprising a substrate holder for holding a substrate opposite said at least one cathode, wherein a gas supply inlet of said third gas introduction mechanism is located at a side position of space formed between said at least one cathode and the substrate held on said substrate holder.
4 . The sputtering system as claimed in claim 1 , wherein said first and second gas introduction mechanism supply reactive gases respectively, and said third gas introduction mechanism supplies an inert gas.
5 . The sputtering system as claimed in claim 1 , wherein said second gas introduction mechanism is located at an outer perimeter of said at least one cathode.Join the waitlist — get patent alerts
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