SiCN film formation method and apparatus

Abstract

A method for forming an SiCN film on a target substrate in a process field is arranged to perform a plurality of cycles. Each cycle includes a first step of performing supply of a first process gas containing a silane family gas; a second step of performing supply of a second process gas containing a nitriding gas; a third step of performing supply of a third process gas containing a carbon hydride gas; and a fourth step of shutting off supply of the first process gas. Each cycle is arranged not to turn any one of the first, second, and third process gases into plasma outside the process field during supply thereof, but to heat the process field to a first temperature, at which the silane family gas, the nitriding gas, and the carbon hydride gas react with each other.

1 . A method for forming an SiCN film on a target substrate in a process field configured to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas, and a third process gas containing a carbon hydride gas, the method being arranged to perform a plurality of cycles to laminate thin films respectively formed by the cycles, thereby forming the SiCN film with a predetermined thickness, each of the cycles comprising:
 a first step of performing supply of the first process gas to the process field;   a second step of performing supply of the second process gas to the process field;   a third step of performing supply of the third process gas to the process field; and   a fourth step of shutting off supply of the first process gas to the process field,   wherein each of the cycles is arranged not to turn any one of the first, second, and third process gases into plasma outside the process field during supply thereof, but to heat the process field to a first temperature, at which the silane family gas, the nitriding gas, and the carbon hydride gas react with each other, during the first, second, third, and fourth steps.   
     
     
         2 . The method according to  claim 1 , wherein each of the cycles comprises a fifth step of shutting off supply of the second process gas to the process field. 
     
     
         3 . The method according to  claim 1 , wherein each of the cycles comprises a sixth step of shutting off supply of the third process gas to the process field. 
     
     
         4 . The method according to  claim 2 , wherein the second step comprises two parts with the fifth step interposed therebetween. 
     
     
         5 . The method according to  claim 3 , wherein the third step comprises two parts with the sixth step interposed therebetween. 
     
     
         6 . The method according to  claim 2 , wherein the second step is longer than the first step. 
     
     
         7 . The method according to  claim 3 , wherein the third step is longer than the first step. 
     
     
         8 . The method according to  claim 1 , wherein each of the cycles comprises no step of shutting off supply of the second process gas to the process field. 
     
     
         9 . The method according to  claim 1 , wherein each of the cycles comprises no step of shutting off supply of the third process gas to the process field. 
     
     
         10 . The method according to  claim 1 , wherein the second step does not overlap with the first step. 
     
     
         11 . The method according to  claim 1 , wherein the second step overlaps with the first step. 
     
     
         12 . The method according to  claim 1 , wherein the third step does not overlap with the first step. 
     
     
         13 . The method according to  claim 1 , wherein the third step overlaps with the first step. 
     
     
         14 . The method according to  claim 1 , wherein each of the cycles comprises a step of exhausting gas from the process field while shutting off supply of the first, second, and third process gases to the process field. 
     
     
         15 . The method according to  claim 1 , wherein each of the cycles comprises a step of storing the first process gas in an amount to be subsequently supplied to the process field, in a storage tank disposed between a flow rate controller and the process field, while performing the fourth step. 
     
     
         16 . The method according to  claim 3 , wherein each of the cycles comprises a step of storing the third process gas in an amount to be subsequently supplied to the process field, in a storage tank disposed between a flow rate controller and the process field, while performing the sixth step. 
     
     
         17 . The method according to  claim 1 , wherein the first temperature is at a temperature of 300 to 700° C. 
     
     
         18 . The method according to  claim 1 , wherein the silane family gas comprises at least one gas selected from the group consisting of dichlorosilane, hexachlorodisilane, monosilane, disilane, hexamethyldisilazane, tetrachlorosilane, disilylamine, trisilylamine, bistertialbutylaminosilane, and diisopropylaminosilane, the nitriding gas comprises at least one gas selected from the group consisting of ammonia, nitrogen, dinitrogen oxide, and nitrogen oxide, and the carbon hydride gas comprises at least one gas selected from the group consisting of acetylene, ethylene, methane, ethane, propane, and butane. 
     
     
         19 . An apparatus for forming an SiCN film on a target substrate, the apparatus comprising:
 a process container having a process field configured to accommodate the target substrate;   a support member configured to support the target substrate inside the process field;   a heater configured to heat the target substrate inside the process field;   an exhaust system configured to exhaust gas from the process field;   a first process gas supply circuit configured to supply a first process gas containing a silane family gas to the process field;   a second process gas supply circuit configured to supply a second process gas containing a nitriding gas to the process field;   a third process gas supply circuit configured to supply a third process gas containing a carbon hydride gas to the process field; and   a control section configured to control an operation of the apparatus,   wherein the control section is preset to conduct a method for forming an SiCN film on the target substrate in the process field by performing a plurality of cycles to laminate thin films respectively formed by the cycles, thereby forming the SiCN film with a predetermined thickness, each of the cycles comprising   a first step of performing supply of the first process gas to the process field,   a second step of performing supply of the second process gas to the process field,   a third step of performing supply of the third process gas to the process field, and   a fourth step of shutting off supply of the first process gas to the process field,   wherein each of the cycles is arranged not to turn any one of the first, second, and third process gases into plasma outside the process field during supply thereof, but to heat the process field to a first temperature, at which the silane family gas, the nitriding gas, and the carbon hydride gas react with each other, during the first, second, third, and fourth steps.   
     
     
         20 . The apparatus according to  claim 19 , wherein the first process gas supply circuit comprises a storage tank disposed between a flow rate controller and the process field, and each of the cycles comprises a step of storing the first process gas in an amount to be subsequently supplied to the process field, in the storage tank, while performing the fourth step. 
     
     
         21 . The apparatus according to  claim 19 , wherein the third process gas supply circuit comprises a storage tank disposed between a flow rate controller and the process field, and each of the cycles comprises a step of storing the third process gas in an amount to be subsequently supplied to the process field, in the storage tank, while performing the sixth step. 
     
     
         23 . A computer readable medium containing program instructions for execution on a processor, which is used for a film formation apparatus having a process field configured to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas, and a third process gas containing a carbon hydride gas, wherein the program instructions, when executed by the processor, cause the film formation apparatus to conduct a method for forming an SiCN film on the target substrate in the process field by performing a plurality of cycles to laminate thin films respectively formed by the cycles, thereby forming the SiCN film with a predetermined thickness, each of the cycles comprising
 a first step of performing supply of the first process gas to the process field,   a second step of performing supply of the second process gas to the process field,   a third step of performing supply of the third process gas to the process field, and   a fourth step of shutting off supply of the first process gas to the process field,   wherein each of the cycles is arranged not to turn any one of the first, second, and third process gases into plasma outside the process field during supply thereof, but to heat the process field to a first temperature, at which the silane family gas, the nitriding gas, and the carbon hydride gas react with each other, during the first, second, third, and fourth steps.