Methods and apparatus for cleaning a substrate edge using chemical and mechanical polishing

Abstract

Methods and apparatus are provided for concurrently chemically and mechanically polishing a substrate edge. The invention includes a substrate support adapted to rotate a substrate; a polishing head adapted to contact an edge of the substrate, the polishing head including a first channel adapted to apply a first fluid to the edge of the substrate; a second channel adapted to direct a second fluid onto a major surface of the rotating substrate; and a third channel adapted to direct a third fluid at the major surface of the substrate and to prevent the second fluid from diluting the first fluid. Numerous other aspects are provided.

1 . An apparatus for concurrently chemically and mechanically polishing a substrate edge, the apparatus comprising:
 a substrate support adapted to rotate a substrate;   a polishing head adapted to contact an edge of the substrate, the polishing head including a first channel adapted to apply a first fluid to the edge of the substrate;   a second channel adapted to direct a second fluid onto a major surface of the rotating substrate; and   a third channel adapted to direct a third fluid at the major surface of the substrate and to prevent the second fluid from diluting the first fluid.   
   
   
       2 . The apparatus of  claim 1  wherein the first channel is further adapted to apply the first fluid to the edge of the substrate where the polishing head contacts the edge. 
   
   
       3 . The apparatus of  claim 1  wherein the polishing head includes one or more sponges adapted to contact the edge of the substrate. 
   
   
       4 . The apparatus of  claim 3  wherein the first channel provides the first fluid to the one or more sponges. 
   
   
       5 . The apparatus of  claim 1  wherein the polishing head includes a pad. 
   
   
       6 . The apparatus of  claim 1  wherein the polishing head includes a polishing tape. 
   
   
       7 . The apparatus of  claim 1  wherein the polishing head includes a conformal backing plate. 
   
   
       8 . The apparatus of  claim 1  wherein the polishing head includes a shaped backing plate. 
   
   
       9 . The apparatus of  claim 1  wherein the second fluid is deionized water. 
   
   
       10 . The apparatus of  claim 1  wherein the shape of the third fluid forms an arc surrounding the edge of the substrate contacted by the polishing head and a portion of the major surface of the substrate. 
   
   
       11 . A system for concurrently chemically and mechanically polishing a substrate edge, the system comprising:
 a substrate support adapted to rotate a substrate;   a polishing head adapted to contact an edge of a substrate,   the polishing head including a first channel adapted to apply a first fluid to the edge of the substrate;   a second channel adapted to direct a second fluid onto a major surface of the rotating substrate;   a third channel adapted to direct a third fluid at the major surface of the substrate and to prevent the second fluid from diluting the first fluid; and   a controller adapted to operate the concurrent chemical and mechanical polishing of the edge of the substrate.   
   
   
       12 . The system of  claim 11  wherein the shape of the third fluid forms an arc surrounding the edge of the substrate contacted by the polishing head and a portion of the major surface of the substrate. 
   
   
       13 . The system of  claim 12 , further comprising a thin curved slit nozzle adapted to form the arc shape of the third fluid. 
   
   
       14 . The system of  claim 11  wherein the third fluid is N 2 . 
   
   
       15 . The system of  claim 11  wherein the controller is adapted to operate the direction of at least one of the second and third fluids. 
   
   
       16 . The system of  claim 11  wherein the controller is adapted to operate the application of the first fluid to the edge of the substrate. 
   
   
       17 . The system of  claim 11  wherein the first channel is further adapted to apply the first fluid to the edge of the substrate where the polishing head contacts the edge. 
   
   
       18 . The system of  claim 11  wherein the polishing head includes one or more sponges adapted to contact the edge of the substrate. 
   
   
       19 . The system of  claim 18  wherein the first channel provides the first fluid to the one or more sponges. 
   
   
       20 . A method for concurrently chemically and mechanically polishing a substrate edge, the method comprising:
 rotating a substrate;   contacting an edge of the substrate with a polishing head;   applying a first fluid to the edge of the substrate via the polishing head;   directing a second fluid onto a major surface of the rotating substrate; and   directing a third fluid at the major surface of the substrate, wherein the third fluid prevents the second fluid from diluting the first fluid.   
   
   
       21 . The method of  claim 20  further comprising:
 arcing the third fluid such that the arc surrounds the edge of the substrate contacted by the polishing head and a portion of the major surface of the substrate.   
   
   
       22 . The method of  claim 20  further comprising:
 rocking the polishing head about the edge of the substrate.   
   
   
       23 . The method of  claim 20  further comprising:
 pressing a polishing tape against the edge of the substrate via the polishing head.   
   
   
       24 . The method of  claim 20  further comprising:
 pressing a polishing pad against the edge of the substrate via the polishing head.   
   
   
       25 . The method of  claim 20  wherein the polishing head includes at least one sponge, and the first fluid is applied to the edge of the substrate via the at least one sponge.