Method of Forming an Isolation Film in a Semiconductor Device

Abstract

A method of forming an isolation film in a semiconductor device is disclosed. The disclosed method includes performing a patterning process on a predetermined region of a semiconductor substrate in which a patterned pad film is formed, forming a trench defining an inactive region and an active region, forming a liner film on the entire surface including the trench, forming an insulating film for trench burial only within the trench, stripping the remaining liner film formed except for the inside of the trench and the patterned pad film formed below the liner film, forming a sacrificial film on the entire surface, and performing a polishing process on the entire surface in which the sacrificial film is formed until the semiconductor substrate of the active region is exposed, thereby forming the isolation film having no topology difference with the semiconductor substrate of the active region.

1 . A method of forming an isolation film of a semiconductor device, comprising:
 providing a semiconductor substrate in which moats are formed at an interface between an active region and an inactive region and an isolation film is formed in the inactive region;   forming a sacrificial film on the active and inactive regions; and   performing a chemical mechanical polishing (CMP) process on the sacrificial film until the semiconductor substrate in the active region is exposed, thereby forming the isolation film having an upper surface that is coplanar with the semiconductor substrate of the active region, wherein comprising performing the chemical mechanical polishing (CMP) process using a slurry having a high selectivity ratio between the sacrificial film and the insulating film for trench burial.   
   
   
       2 . The method as claimed in  claim 1 , wherein the sacrificial film is a sacrificial oxide film that is formed by a deposition method of a CVD mode or a PVD mode, or by a growth process in an oxygen atmosphere. 
   
   
       3 . The method as claimed in  claim 1 , wherein the sacrificial film comprises a sacrificial oxide film formed by one of a dry oxidization process or a wet oxidization process using H 2  and O 2  gas at a pressure of about 10 Torr to about 100 Torr for about 3 hours to about 5 hours.