Semiconductor device and method for manufacturing the same

Abstract

A method for manufacturing a semiconductor device including, forming a first insulating film above a silicon substrate, forming an impurity layer in the first insulating film by ion-implanting impurities into a predetermined depth of the first insulating film, and modifying the impurity layer to a barrier insulating film by annealing the first insulating film after the impurity layer is formed, is provided.

1 . A method for manufacturing a semiconductor device, comprising:
 forming an insulating film over a semiconductor substrate;   forming an impurity layer in the insulating film by ion-implanting impurities into a predetermined depth of the insulating film; and   modifying the impurity layer to a barrier insulating film by annealing the insulating film after the impurity layer is formed.   
     
     
         2 . The method for manufacturing a semiconductor device according to  claim 1 , further comprising:
 forming a conductive pattern over the semiconductor substrate,   wherein, when forming the insulating film, the insulating film is formed on the conductive pattern, and   the method further comprising:   forming a hole in the insulating film on the conductive pattern; and   forming a conductive material which is electrically connected to the conductive pattern in the hole.   
     
     
         3 . The method for manufacturing a semiconductor device according to  claim 2 , wherein the forming of the barrier insulating film is carried out before forming the hole. 
     
     
         4 . The method for manufacturing a semiconductor device according to  claim 2 , wherein
 the forming of the impurity layer is carried out after forming the conductive material, and   the annealing of the insulating film is carried out in an atmosphere of an inert gas from which oxygen is excluded.   
     
     
         5 . The method for manufacturing a semiconductor device according to  claim 2 , wherein a metal wiring is formed as the conductive pattern. 
     
     
         6 . The method for manufacturing a semiconductor device according to  claim 2 , wherein an impurity diffusion region is formed as the conductive pattern in a surface layer of the semiconductor substrate. 
     
     
         7 . The method for manufacturing a semiconductor device according to  claim 2 , wherein
 a bonding pad is formed as the conductive pattern, and   a passivation film is formed as the insulating film.   
     
     
         8 . The method for manufacturing a semiconductor device according to  claim 2 , wherein any one of lower and upper electrodes of a ferroelectric capacitor including a capacitor dielectric film formed of a ferroelectric material is formed as the conductive pattern. 
     
     
         9 . The method for manufacturing a semiconductor device according to  claim 8 , wherein
 a plurality of the ferroelectric capacitors are formed in a cell region of the semiconductor substrate, and,   when forming the barrier insulating film, the barrier insulating film is formed at least in the cell region.   
     
     
         10 . The method for manufacturing a semiconductor device according to  claim 1 , wherein,
 when forming the impurity layer, the ion implantation is carried out for a plurality of times by changing acceleration energy, to form a plurality of the impurity layers in different depths of the insulating film, and,   when forming the barrier insulating film, the plurality of the impurity layers are modified by annealing to form a plurality of the barrier insulating films.   
     
     
         11 . The method for manufacturing a semiconductor device according to  claim 1 , wherein
 at least two films of the insulating films are formed, and   the barrier insulating film is formed in each of the insulating films.   
     
     
         12 . The method for manufacturing a semiconductor device according to  claim 1 , further comprising:
 planarizing an upper surface of the insulating film before forming the impurity layer.   
     
     
         13 . The method for manufacturing a semiconductor device according to  claim 1 , wherein, when forming the impurity layer, any one of nitrogen, carbon, and fluorine is ion-implanted as the impurities into the insulating film to form a film of preventing, as the barrier insulating film, moisture or hydrogen penetration. 
     
     
         14 . A method for manufacturing a semiconductor device, comprising:
 forming an insulating film over a semiconductor substrate;   forming an impurity layer in the insulating film by ion-implanting impurities into a predetermined depth of the insulating film;   modifying the impurity layer to an etching stopper film by annealing the insulating film after the impurity layer is formed;   forming a mask film provided with an opening over the insulating film;   forming a groove in the insulating film over the etching stopper film by etching the insulating film through the opening; and   embedding a wiring in the groove.   
     
     
         15 . The method for manufacturing a semiconductor device according to  claim 14 , further comprising:
 forming, over the mask film, a resist pattern provided with a window over the opening;   forming a first hole overlapping with the opening in the insulating film over the etching stopper film, by etching the insulating film through the window; and   forming a second hole in the etching stopper film by etching the etching stopper film through the first hole,   wherein, when forming the groove in the insulating film, a third hole is formed in the insulating film by etching, through the second hole, the insulating film lower than the etching stopper film, and   when embedding the wiring in the groove, the wiring is embedded also in the third hole.   
     
     
         16 . The method for manufacturing a semiconductor device according to  claim 15 , further comprising:
 forming a conductive pattern over the semiconductor substrate before forming the insulating film, wherein, when forming the insulating film, the insulating film is formed over the conductive pattern;   when forming the groove in the insulating film, the third hole is formed over the conductive pattern; and   when embedding the wiring in the groove, the wiring is embedded in the third hole so as to be electrically connected to the conductive pattern.   
     
     
         17 . The method for manufacturing a semiconductor device according to  claim 16 , further comprising:
 forming a cover insulating film containing the impurities over the conductive pattern; and   etching the etching stopper film and the cover insulating film at the same time to expose the conductive pattern in the third hole by removing the cover insulating film under the third hole, and removing the etching stopper film under the groove, after forming the third hole.   
     
     
         18 . A semiconductor device, comprising:
 an insulating film formed over a semiconductor substrate; and   an impurity-containing insulating film, which is formed in a predetermined depth of the insulating film, and which contains impurities,   wherein the concentration of the impurities continuously increases from the insulating film towards the impurity-containing insulating film.   
     
     
         19 . The semiconductor device according to  claim 18 , wherein a groove is formed in the insulating film and the impurity-containing insulating film, and a wiring is formed in the groove. 
     
     
         20 . The semiconductor device according to  claim 18 , wherein the impurities are any one of nitrogen, carbon, and fluorine.