Method for Manufacturing a Magnetoresistive Multilayer Film

Abstract

This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.

1 - 16 . (canceled) 
     
     
         17 . A method for manufacturing a magnetoresistive multilayer film, comprising
 laminating an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer on a substrate;   wherein the antiferromagnetic layer is deposited by a sputtering process as a gas of larger atomic number than argon is used at a flow rate of 10 percent or more; and   wherein the pinned-magnetization layer is the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer, and the free-magnetization layer is the layer where direction of magnetization is free.   
     
     
         18 . A method for manufacturing a magnetoresistive multilayer film as claimed in the  claim 17 , wherein the gas of atomic number larger than argon is krypton. 
     
     
         19 . A method for manufacturing a magnetoresistive multilayer film as claimed in the  claim 17 , wherein the gas of atomic number larger than argon is xenon. 
     
     
         20 . A method for manufacturing a magnetoresistive multilayer film, comprising
 laminating an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer on a substrate;   wherein the antiferromagnetic layer is deposited by a sputtering process as a gas of larger atomic number than argon is used at a flow rate of 50 percent or more; and   wherein the pinned-magnetization layer is the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer, and the free-magnetization layer is the layer where direction of magnetization is free.   
     
     
         21 . A method for manufacturing a magnetoresistive multilayer film as claimed in the  claim 20 , wherein the gas of atomic number larger than argon is krypton. 
     
     
         22 . A method for manufacturing a magnetoresistive multilayer film as claimed in the  claim 20 , wherein the gas of atomic number larger than argon is xenon. 
     
     
         23 . A method for manufacturing a magnetoresistive multilayer film, comprising
 laminating an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer on a substrate;   wherein the antiferromagnetic layer is deposited by a sputtering process as a gas of larger atomic number than argon is used at a flow rate of 100 percent; and   wherein the pinned-magnetization layer is the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer, and the free-magnetization layer is the layer where direction of magnetization is free.   
     
     
         24 . A method for manufacturing a magnetoresistive multilayer film as claimed in the  claim 23 , wherein the gas of atomic number larger than argon is krypton. 
     
     
         25 . A method for manufacturing a magnetoresistive multilayer film as claimed in the  claim 23 , wherein the gas of atomic number larger than argon is xenon.