Semiconductor device and method for fabricating the same

Abstract

Method of manufacturing a semiconductor device, including: preparing a TAB tape featuring an insulating tape having a device hole and a plurality of holes, a plurality of leads formed on a surface of the tape and extending at one end into the device hole and at the other end into the holes, slits provided inside arrangements of columns of holes, and a warp prevention reinforcement insulating film to hold the leads between it and the tape; connecting front ends of the leads to the electrodes of the chip; forming an encapsulant to enclose the chip, the leads and a portion of the tape; forming thick bump electrodes on that surface side of the leads running through the holes to which the semiconductor chip is connected; performing an electric characteristic test, using the bump electrodes as measuring terminals; and cutting the TAB tape to a predetermined shape.

1 . A method of manufacturing a semiconductor device, comprising the steps of:
 preparing a TAB tape, the TAB tape having an insulating tape having a first surface, a second surface opposite the first surface, a device hole and a plurality of holes, a plurality of leads formed on the first or second surface of the tape and extending at one end into the device hole and at the other end into the holes, slits arranged along columns of the holes and provided in a portion of the tape inside the hole columns, and a warp prevention reinforcement made of an insulating film and formed over the tape to hold the leads between it and the tape;   putting front ends of the leads, which extend into the device hole, on the electrodes of a semiconductor chip, which has a plurality of electrodes on a main surface thereof, and electrically connecting them together;   forming an encapsulant from an insulating resin on a main surface side of the semiconductor chip to enclose the semiconductor chip, the leads and a predetermined portion of the tape;   forming bump electrodes on that surface side of the leads running through the holes to which the semiconductor chip is connected, the bump electrodes being formed thicker than the semiconductor chip;   performing an electric characteristic test by using the bump electrodes as measuring terminals; and   cutting the TAB tape to a predetermined shape.   
     
     
         2 . A method of manufacturing a semiconductor device according to  claim 1 , wherein, in the TAB tape, the warp prevention reinforcement is provided in an entire area outside the slits. 
     
     
         3 . A method of manufacturing a semiconductor device according to  claim 1 , wherein, in the TAB tape, the holes, in which to form the bump electrodes, are formed in such a manner that their inner circumferential surface is, relatively, narrow in diameter on the lead side and wide on the tape surface side away from the lead. 
     
     
         4 . A method of manufacturing a semiconductor device according to  claim 1 , wherein, in the TAB tape, the insulating tape is formed of a polyimide resin and the warp prevention reinforcement is formed of a solder resist film or resin tape. 
     
     
         5 . A method of manufacturing a semiconductor device according to  claim 1 , wherein, in the TAB tape, the warp prevention reinforcement is also provided in an area to be covered with the insulating resin. 
     
     
         6 . A method of manufacturing a semiconductor device according to  claim 1 , wherein the encapsulant is formed so that the slits are situated outside the encapsulant. 
     
     
         7 . A method of manufacturing a semiconductor device according to  claim 1 , wherein a semiconductor chip having electrodes along a center of a main surface thereof is prepared and the leads situated in the device hole are connected to the associated electrodes of the semiconductor chip. 
     
     
         8 . A method of manufacturing a semiconductor device according to  claim 1 , wherein a semiconductor chip having electrodes along edges of a main surface thereof is prepared and the leads situated in the device hole are connected to the associated electrodes of the semiconductor chip. 
     
     
         9 . A method of manufacturing a semiconductor device according to  claim 1 , wherein the TAB tape has dummy leads that do not extend at one end into the device hole. 
     
     
         10 . A method of manufacturing a multi-tier type semiconductor device, comprising the steps of:
 stacking a plurality of semiconductor devices one upon the other, which are formed according to  claim 1 ; and   electrically connecting bump electrodes of the semiconductor device on an upper tier to the leads running through the holes in the semiconductor device on the lower tier.