Dummy substrate and substrate processing method using the same

Abstract

A dummy substrate is obtained by covering a silicon substrate with a resin coating. This increases the strength of the dummy substrate, prevents pieces and particles of the silicon substrate from scattering, and even when the dummy substrate is damaged during processing, prevents them from contaminating a processing apparatus. The use of a chemical-resistant resin for the resin coating restrains the dummy substrate from being etched by a cleaning process using a chemical solution and increases the number of times that the dummy substrate can repeatedly be used.

1 . A dummy substrate having substantially the same mass as each of to-be-processed substrates and made of a plate material, at least the outer edge of said plate material being coated with a resin. 
     
     
         2 . The dummy substrate of  claim 1 , wherein
 the entire surfaces of the plate material are coated with the resin.   
     
     
         3 . The dummy substrate of  claim 1 , wherein
 the dummy substrate has substantially the same shape and size as each said to-be-processed substrate.   
     
     
         4 . The dummy substrate of  claim 1 , wherein
 the resin is chemical-resistant.   
     
     
         5 . The dummy substrate of  claim 1 , wherein
 the resin is conductive.   
     
     
         6 . The dummy substrate of  claim 1 , wherein
 any one of the principal surfaces of the dummy substrate is marked.   
     
     
         7 . The dummy substrate of  claim 1 , wherein
 the plate material is a single crystal silicon substrate or a substrate containing single crystal silicon.   
     
     
         8 - 15 . (canceled) 
     
     
         16 . The dummy substrate of  claim 2 , wherein
 the dummy substrate has substantially the same shape and size as each said to-be-processed substrate.   
     
     
         17 . The dummy substrate of  claim 2 , wherein
 the resin layer is a fluorine-containing resin.   
     
     
         18 . The dummy substrate of  claim 2 , wherein
 the resin layer is conductive.   
     
     
         19 . The dummy substrate of  claim 2 , wherein
 the plate material is a single crystal silicon substrate or a substrate containing single crystal silicon.