Film of N Type (100) Oriented Single Crystal Diamond Semiconductor Doped with Phosphorous Atoms, and a Method of Producing the Same

Abstract

There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorus atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorus compound in the plasma vapor phase, the ratio of phosphorus atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

1 . An n type (100) oriented single crystal diamond semiconductor film doped with phosphorus atoms. 
     
     
         2 . A method of producing an n type (100) oriented single crystal diamond semiconductor film, comprising growing on a diamond substrate epitaxially under such conditions that;
 the substrate is (100) oriented diamond,   a means of chemical vapor phase deposition provides hydrogen, hydrocarbon and a phosphorus compound in the plasma vapor phase,   the ratio of phosphorus atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and   the ratio of carbon atoms to hydrogen atoms is no less than 0.05%.   
     
     
         3 . The method of producing an n type (100) oriented single crystal diamond semiconductor film according to  claim 2 , wherein the means of chemical vapor phase deposition is selected from among the methods represented by microwave CVD, filament CVD, DC plasma CVD and arc jet plasma CVD. 
     
     
         4 . The method of producing an n type (100) oriented single crystal diamond semiconductor film according to  claim 2 , wherein the diamond substrate having an off angle of 0 degree to 10 where the plane oriented is inclined by 10 degrees from 0 to any direction from (100)plane can be used as the diamond subrate. 
     
     
         5 . The method of producing an n type (100) oriented single crystal diamond semiconductor film according to any one of the  claims 2  to  4 , wherein the weight ratio of phosphorus atoms to carbon atoms in the plasma vapor phase can be controlled, so that the properties of the semiconductor can be controlled. 
     
     
         6 . The method of the producing an n type (100) oriented single crystal diamond semiconductor film according to  claim 2 , wherein the temperature on the surface of the substrate can be set to 800° C. to 1000° C.