Trench Isolation Structure and a Method of Manufacture Therefor

Abstract

The present invention provides a trench isolation structure, a method of manufacture therefor and a method for manufacturing an integrated circuit including the same. The trench isolation structure ( 130 ), in one embodiment, includes a trench located within a substrate ( 110 ), the trench having a buffer layer ( 133 ) located on sidewalls thereof. The trench isolation structure ( 130 ) further includes a barrier layer ( 135 ) located over the buffer layer ( 133 ), and fill material ( 138 ) located over the barrier layer ( 135 ) and substantially filling the trench.

1 . (canceled) 
   
   
       2 . (canceled) 
   
   
       3 . (canceled) 
   
   
       4 . (canceled) 
   
   
       5 . (canceled) 
   
   
       6 . (canceled) 
   
   
       7 . (canceled) 
   
   
       8 . (canceled) 
   
   
       9 . (canceled) 
   
   
       10 . (canceled) 
   
   
       11 . (canceled) 
   
   
       12 . A trench isolation structure, comprising:
 a trench located within a substrate, the trench having sidewalls and a bottom surface;   a buffer layer located on the sidewalls of the trench; and   fill material located over the buffer layer, the fill material substantially filling the trench.   
   
   
       13 . The trench isolation structure as recited in  claim 12  wherein a barrier layer is located between the buffer layer and the fill material. 
   
   
       14 . The trench isolation structure as recited in  claim 13  wherein the barrier layer has a thickness ranging from about 4 nm to about 20 nm. 
   
   
       15 . The trench isolation structure as recited in  claim 13  wherein the buffer layer is a layer of silicon. 
   
   
       16 . The trench isolation structure as recited in  claim 15  wherein the barrier layer is a silicon dioxide barrier layer located on the layer of silicon. 
   
   
       17 . The trench isolation structure as recited in  claim 12  wherein an interface exists between the buffer layer and the sidewalls. 
   
   
       18 . The trench isolation structure as recited in  claim 12  wherein the substrate includes a first portion comprising silicon germanium and a second portion comprising silicon. 
   
   
       19 . The trench isolation structure as recited in  claim 18  wherein at least a portion of the buffer layer proximate the first portion includes germanium. 
   
   
       20 . The trench isolation structure as recited in  claim 12  wherein the buffer layer has a thickness ranging from about 1 nm to about 5 nm. 
   
   
       21 . The trench isolation structure as recited in  claim 12  wherein the buffer layer is further located on the bottom surface. 
   
   
       22 . (canceled) 
   
   
       23 . (canceled) 
   
   
       24 . (canceled) 
   
   
       25 . (canceled) 
   
   
       26 . (canceled) 
   
   
       27 . (canceled) 
   
   
       28 . (canceled)