Semiconductor Light Emitting Element and Method for Manufacturing the Same

Abstract

A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1λ to 3λ on the side surfaces.

1 . A method for manufacturing a semiconductor light emitting element, comprising:
 forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, said light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate;   forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and   forming a plurality of depressions and protrusions on the side surfaces by regrowing GaP thereon by MOCVD using source material gases of a group V source material including phosphorus and a group III source material including gallium at a growth temperature in a range from a lower limit equal to or higher than 350° C. to an upper limit equal to or lower than 700° C.   
   
   
       2 . A method for manufacturing a semiconductor light emitting element according to  claim 1  wherein the depressions and protrusions have a height in a range from a lower limit equal to or higher than 0.1λ to an upper limit equal to or lower than 3λ. 
   
   
       3 . A method for manufacturing a semiconductor light emitting element according to  claim 1  wherein the GaP substrate is an off-axis (100) GaP substrate with the off-axis angle of θ (5°≦θ≦20°) along the [011] direction. 
   
   
       4 . A method for manufacturing a semiconductor light emitting element according to  claim 1 , wherein, in the step of forming the plurality of side surfaces, a first to a fourth side surfaces are formed, the first side surface being (1-11) oriented, the second side surface being slanted at a predetermined angle from the (111) orientation, the third side surface being (11-1) oriented, and the fourth side surface being slanted at a predetermined angle from the (1-1-1) orientation.