Method of manufacturing semiconductor device

Abstract

Disclosed herein is a method for manufacturing a semiconductor device, the method including the steps of: forming a recess in an insulating film provided over a substrate; forming a plating seed layer in such a way that an inner wall of the recess is covered, the plating seed layer arising from sequential deposition of an alloy layer composed of copper and a metal other than copper and a conductive layer composed mainly of copper; burying a conductive layer composed mainly of copper by plating in the recess on which the plating seed layer is provided; and carrying out heat treatment to cause the metal in the alloy layer to react with a constituent in the insulating film, to thereby form a barrier film composed of a metal compound having a copper diffusion barrier function at an interface between the alloy layer and the insulating film.

1 . A method for manufacturing a semiconductor device, the method comprising the steps of:
 forming a recess in an insulating film provided over a substrate;   forming a plating seed layer in such a way that an inner wall of the recess is covered, the plating seed layer arising from sequential deposition of an alloy layer composed of copper and a metal other than copper and a conductive layer composed mainly of copper;   burying a conductive layer composed mainly of copper by plating in the recess on which the plating seed layer is provided; and   carrying out heat treatment to cause the metal in the alloy layer to react with a constituent in the insulating film, to thereby form a barrier film composed of a metal compound having a copper diffusion barrier function at an interface between the alloy layer and the insulating film.   
     
     
         2 . The method for manufacturing a semiconductor device according to  claim 1 , wherein
 the metal other than copper is manganese and the metal compound is a manganese oxide.   
     
     
         3 . The method for manufacturing a semiconductor device according to  claim 1 , wherein
 the metal other than copper is manganese and the metal compound is a silicon-containing manganese oxide.