Method for fabricating a sensor semiconductor device with sensor chip

Abstract

A sensor semiconductor device and a method for fabricating the same are proposed. A sensor chip is mounted on a substrate, and a dielectric layer and a circuit layer are formed on the substrate, wherein the circuit layer is electrically connected to the substrate and the sensor chip. The dielectric layer is formed with an opening for exposing a sensor region of the sensor chip. A light-penetrable lid covers the opening of the dielectric layer, such that light is able to penetrate the light-penetrable lid to reach the sensor region and activate the sensor chip. The sensor chip can be electrically connected to an external device via a plurality of solder balls implanted on a surface of the substrate not for mounting the sensor chip. Therefore, the sensor semiconductor device is fabricated in a cost-effective manner, and circuit cracking and a know good die (KGD) problem are prevented.

1 . A method for fabricating a sensor semiconductor device, comprising the steps of:
 mounting at least one sensor chip on at least one substrate having a first surface and a corresponding second surface, the sensor chip having an active surface and a corresponding non-active surface, wherein the first surface of the substrate is formed with a plurality of connecting pads, the active surface of the sensor chip is formed with a sensor region and a plurality of electrode pads, and the non-active surface of the sensor chip is attached to the first surface of the substrate;   applying a dielectric layer on the substrate and the sensor chip, wherein the dielectric layer is formed with a plurality of first openings corresponding in position to the connecting pads of the substrate and the electrode pads of the sensor chip;   forming a circuit layer on the dielectric layer, wherein the circuit layer is electrically connected to the connecting pads of the substrate and the electrode pads of the sensor chip;   forming a second opening in the dielectric layer at a position corresponding to the sensor region of the sensor chip; and   providing a light-penetrable lid to cover the second opening of the dielectric layer corresponding to the sensor region of the sensor chip.   
   
   
       2 . The method of  claim 1 , further comprising a step of implanting a plurality of solder balls on the second surface of the substrate. 
   
   
       3 . The method of  claim 1 , further comprising a step of performing a circuit build-up process on the circuit layer that is electrically connected to the connecting pads of the substrate and the electrode pads of the sensor chip. 
   
   
       4 . The method of  claim 1 , wherein a chamfer is formed on a peripheral area of the active surface of the sensor chip. 
   
   
       5 . The method of  claim 1 , wherein the sensor chip is thinned before being mounted on the substrate. 
   
   
       6 . The method of  claim 1 , wherein a good die is selected as the sensor chip before mounting the sensor chip on the substrate. 
   
   
       7 . The method of  claim 1 , wherein the at least one substrate comprises at least one single substrate, a matrix of substrates, or a strip of substrates. 
   
   
       8 . The method of  claim 1 , wherein the sensor semiconductor device is a chip-scale packaged sensor semiconductor device.