Semiconductor device

Abstract

Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.

1 . A semiconductor device, comprising:
 a plurality of amplifying stageshaving amplifier circuits respectively, said amplifying stages being provided over the same semiconductor chip,   wherein the plurality of amplifying stages are respectively formed of field effect transistors placed over a semiconductor substrate constituted of silicon of the semiconductor chip, and   wherein the plurality of amplifying stages are disposed to provide input and output units of the respective, adjacent ones of the amplifying stages respectively opposed   
   
   
       2 . A semiconductor device according to  claim 1 , wherein resistivity of the semiconductor substrate is smaller than 10 mΩ·cm, the field effect transistors are respectively configured as horizontal type field effect transistors, and the sources of the field effect transistors are electrically connected to the semiconductor substrate through semiconductor regions and are electrically connected to a fixed potential via an electrode on a back surface of the semiconductor substrate.