Inspection device for inspecting tft

Abstract

Provided is an inspection device which inspects a thin film transistor (TFT) for supplying a current to a light emitting element. The inspection device includes: a first current supply circuit which supplies a drain current between a drain and a source of the TFT; a gate voltage adjustment circuit which adjust a gate voltage to be applied to a gate of the TFT so as to allow a predetermined specified current to flow between the drain and source of the TFT; and a measurement unit which measures the gate voltage adjusted by the gate voltage adjustment circuit.

1 . An inspection device adapted to inspect a thin film transistor (TFT) for supplying a current to a light emitting element, said inspection device comprising:
 a first current supply circuit adapted to supply a drain current between a drain and a source of said TFT;   a gate voltage adjustment circuit adapted to adjust a gate voltage to be applied to a gate of said TFT so as to allow a predetermined specified current to flow between said drain and said source of said TFT;   a measurement unit adapted to measure said gate voltage adjusted by said gate voltage adjustment circuit; and   a calculation unit operatively connected to said measurement unit and adapted to calculate a threshold voltage that is a threshold of a potential difference between said gate and said source of said TFT necessary to allow a current to flow between said drain and said source of said TFT based on the sequentially measured drain currents and a value β that is a parameter indicating a level of current supply between said drain and said source of said TFT.   
   
   
       2 . The inspection device according to  claim 1 , wherein when said drain current supplied by said first current supply circuit is larger, as determined by said gate voltage adjustment circuit, than said predetermined specified current, then said gate voltage adjustment circuit is adapted to adjust said gate voltage so as to reduce said drain current, and when said drain current supplied by said first current supply circuit is smaller than said predetermined specified current, then said gate voltage adjustment circuit is adapted to adjust said gate voltage so as to increase said drain current. 
   
   
       3 . The inspection device according to  claim 1 ,
 wherein said TFT operates in a linear region where said drain current varies substantially linearly with voltages between said drain and said source or in a saturation region where said drain current varies less than in said linear region,   wherein one of said drain and said source of said TFT has a potential difference of an unknown and variable magnitude from a ground potential,   wherein said first current supply circuit is adapted to supply said drain current by applying such a voltage so as to cause said TFT to operate in said saturation region to an other one of said drain and said source of said TFT,   wherein said gate voltage adjustment circuit is adapted to sequentially adjust gate voltages so as to allow at least two specified currents of different magnitudes from each other to sequentially flow between said drain and said source,   wherein said measurement unit is adapted to sequentially measure said at least two gate voltages adjusted by said gate voltage adjustment circuit, and   wherein said calculation unit is adapted to calculate said value β, wherein said value β indicating a level of current supply between said drain and said source of said TFT is based on the measured gate voltages.   
   
   
       4 . The inspection device according to  claim 3 , further comprising:
 a second current supply circuit adapted to supply a drain current between said drain and said source of said TFT by applying a drain voltage to said drain of said TFT, wherein said source comprises a potential difference of an unknown and variable magnitude from said ground potential;   a gate voltage application circuit adapted to apply a predetermined gate voltage to said gate of said TFT; and   a drain current adjustment circuit adapted to adjust said drain current supplied by said second current supply circuit so as to make a potential difference between said gate voltage and said drain voltage become a preset set potential and so as to cause said TFT to operate in said linear region, and   wherein said measurement unit is adapted to sequentially measure drain currents adjusted by said drain current adjustment circuit for at least two different set potentials.   
   
   
       5 . The inspection device according to  claim 3 ,
 wherein said inspection device is a device adapted to inspect a TFT array including a plurality of TFTs arrayed in a matrix,   wherein said first current supply circuit is adapted to sequentially supply said drain current between said drain and said source of each said TFT included in said TFT array,   wherein said gate voltage adjustment circuit is adapted to sequentially adjust said gate voltages so as to allow said at least two specified currents of different magnitudes from each other to sequentially flow between said drain and said source of said TFT to which a current is supplied by said first current supply circuit,   wherein said measurement unit is adapted to measure said gate voltage adjusted for each of said plurality of TFTs, and   wherein said calculation unit is adapted to calculate said value β for each of said plurality of TFTs and when a range of dispersion of said value β for each said TFT is wider than a predetermined reference, then said calculation unit is adapted to provide an output indicating that said TFT array is defective.   
   
   
       6 . The inspection device according to  claim 1 ,
 wherein said inspection device is adapted to inspect a TFT array comprising a plurality of TFTs arranged in a matrix,   wherein said first current supply circuit is adapted to sequentially supply said drain current between said drain and said source of each said TFT included in said TFT array,   wherein said gate voltage adjustment circuit is adapted to sequentially adjust said gate voltage so as to allow at least two predetermined specified currents of different magnitudes from each other to sequentially flow between said drain and said source of said TFT to which a current is supplied by said first current supply circuit;   wherein said measurement unit is adapted to measure said gate voltages adjusted for each of said plurality of TFTs, and   wherein when a range of dispersion of the threshold of potential difference calculated for each said TFT is wider than a predetermined reference, then said calculation unit is adapted to provide an output indicating that said TFT array is defective.   
   
   
       7 . The inspection device according to  claim 6 , further comprising an offset current measurement unit,
 wherein said TFT array comprises power supply wiring common to said plurality of TFTs,   wherein said first power supply circuit is adapted to supply said drain current between said drain and said source of each of said TFTs through said power supply wiring, and   wherein said offset current measurement unit is adapted to measure a magnitude of an offset current which is supplied from said first current supply circuit to said power supply wiring in a state where all said TFTs in said TFT array are not driven and, when said measurement unit measures said gate voltages, then said offset current measurement unit is adapted to supply said offset current to said power supply wiring.   
   
   
       8 . An inspection device adapted to inspect a thin film transistor (TFT) for supplying a current to a light emitting element, wherein said TFT is adapted to operate in any of (i) a linear region where a drain current varies substantially linearly with voltages between a drain and a source of said TFT, and (ii) a saturation region where said drain current varies less than in said linear region, wherein said source of said TFT comprises a potential difference of an unknown and variable magnitude from a ground potential, wherein said inspection device comprises:
 a current supply circuit adapted to supply a drain current between said drain and said source of said TFT by applying a drain voltage to said drain of said TFT;   a gate voltage application circuit adapted to apply a predetermined gate voltage to a gate of said TFT;   a drain current adjustment circuit adapted to adjust said drain current supplied by said current supply circuit so as to make a potential difference between said gate voltage and said drain voltage become a preset set potential and so as to cause said TFT to operate in said linear region;   a measurement unit adapted to sequentially measure said drain current adjusted by said drain current adjustment circuit for at least two different set potentials; and   a calculation unit operatively connected to said measurement unit and adapted to calculate a threshold voltage that is a threshold of a potential difference between said gate and said source of said TFT necessary to allow a current to flow between said drain and said source of said TFT based on the sequentially measured drain currents and a value β that is a parameter indicating a level of current supply between said drain and said source of said TFT.   
   
   
       9 . An inspection device adapted to inspect a thin film transistor (TFT) for supplying a current to a light emitting element, wherein said TFT is adapted to operate in any of (i) a linear region where a drain current varies substantially linearly with voltages between a drain and a source of said TFT, and (ii) a saturation region where said drain current varies less than in said linear region, wherein said source of said TFT comprises a potential difference of an unknown and variable magnitude from a ground potential, wherein said inspection device comprises:
 a potential difference retaining circuit adapted to maintain such a potential difference so as to cause said TFT to operate in said linear region between a gate voltage to be applied to a gate of said TFT and a drain voltage to be applied to said drain of said TFT;   a current supply circuit adapted to supply a drain current between said drain and said source of said TFT by applying said drain voltage to said drain of said TFT;   a drain voltage adjustment circuit adapted to adjust said drain voltage so as to allow a preset set current to flow between said drain and said source of said TFT;   a measurement unit adapted to cause said drain voltage adjustment circuit to sequentially adjust said drain voltage so as to allow at least two different set currents to flow, wherein said measurement unit is adapted to sequentially measure said gate voltage when said drain voltage is adjusted; and   a calculation unit operatively connected to said measurement unit and adapted to calculate a threshold voltage that is a threshold of a potential difference between said gate and said source of said TFT necessary to allow a current to flow between said drain and said source of said TFT based on the sequentially measured gate voltages, drain currents calculated based on gate voltages, and a value β that is a parameter indicating a level of current supply between said drain and said source of said TFT.   
   
   
       10 . An inspection device adapted to inspect a thin film transistor (TFT) for supplying a current to a light emitting element, wherein one of a drain and a source of said TFT comprises a potential difference of an unknown magnitude from a ground potential, wherein said TFT is adapted to operate in (i) a linear region where a drain current varies substantially linearly with voltages between said drain and said source of said TFT, and (ii) a saturation region where said drain current varies less than in said linear region, and wherein said inspection device comprises:
 a gate voltage application circuit adapted to apply a gate voltage to a gate of said TFT;   a drain voltage application circuit adapted to apply between said drain and said source such a voltage so as to cause said TFT to operate in said saturation region;   a measurement unit adapted to measure a drain current flowing between said drain and said source of said TFT for each of at least two gate voltages applied by said gate voltage application circuit; and   a calculation unit operatively connected to said measurement unit and adapted to calculate a threshold voltage that is a threshold of a potential difference between said gate and said source of said TFT necessary to allow a current to flow between said drain and said source of said TFT based on the measured drain current and a value β that is a parameter indicating a level of current supply between said drain and said source of said TFT.