Wafer, semiconductor device, and fabrication methods therefor

Abstract

In order to fabricate a semiconductor device that can perform at its full capacity, in which (i) a single-crystal silicon integrated circuit is formed on an insulating substrate without an adhesive agent, and (ii) an active region of the single-crystal integrated circuit is not damaged by implantation of hydrogen ions, (a) the single-crystal silicon integrated circuit is formed on the insulating substrate, and (b) the single-crystal silicon integrated circuit is surrounded by an oxide (buried oxide layer made of silicon dioxide).

1 - 4 . (canceled) 
     
     
         5 . A semiconductor device, comprising at least a single-crystal silicon integrated circuit on an insulating substrate, wherein the single-crystal silicon integrated circuit is completely surrounded by an oxide. 
     
     
         6 . The semiconductor device as set forth in  claim 5 , wherein the insulating substrate includes a non-single-crystal silicon integrated circuit. 
     
     
         7 . The semiconductor device as set forth in  claim 5  or  6 , wherein the oxide is a silicon dioxide. 
     
     
         8 - 15 . (canceled) 
     
     
         16 . The semiconductor device as set forth in  claim 6 , wherein said non-single-crystal silicon comprises silicon that is not single-crystal silicon.