Copper-elastomer hybrid thermal interface material to cool under-substrate silicon

Abstract

In some embodiments, copper-elastomer hybrid thermal interface material to cool under-substrate silicon is presented. In this regard, an apparatus is introduced having a layer of copper, a layer of elastomer, and a layer of thin film thermal interface material between the copper and elastomer layers. Other embodiments are also disclosed and claimed.

1 . An apparatus comprising:
 a layer of copper;   a layer of elastomer; and   a layer of thin film thermal interface material between the copper and elastomer layers.   
     
     
         2 . The apparatus of  claim 1 , wherein the thin film thermal interface material comprises a principal material chosen from the group consisting of: thermal grease, phase-change material, and solder alloy. 
     
     
         3 . The apparatus of  claim 2 , further comprising layers of thin film thermal interface material on outside mating surfaces of the copper and elastomer layers. 
     
     
         4 . The apparatus of  claim 3 , wherein the elastomer layer has a bulk thermal conductivity of about 3 W/m C. 
     
     
         5 . The apparatus of  claim 3 , further comprising an elastomer layer height of about 2 mm uncompressed. 
     
     
         6 . The apparatus of  claim 4 , wherein the elastomer layer height is designed to be about 1 mm compressed. 
     
     
         7 . The apparatus of  claim 3 , wherein the copper layer has a thickness of about 2 mm. 
     
     
         8 . The apparatus of  claim 3 , further comprising a length of about 15 mm. 
     
     
         9 . The apparatus of  claim 3 , further comprising a width of about 10 mm. 
     
     
         10 . An electronic appliance comprising:
 a network controller;   a system memory;   a processor, wherein the processor includes an under-substrate silicon die; and   a thermal interface material coupled with the under-substrate silicon die, the thermal interface material comprising a layer of copper, a layer of elastomer, and a layer of thin film thermal interface material between the copper and elastomer layers.   
     
     
         11 . The electronic appliance of  claim 10 , further comprising layers of thin film thermal interface material on outside mating surfaces of the copper and elastomer layers. 
     
     
         12 . The electronic appliance of  claim 11 , wherein the thin film thermal interface material comprises a principal material chosen from the group consisting of: thermal grease, phase-change material, and solder alloy. 
     
     
         13 . The electronic appliance of  claim 12 , wherein the elastomer layer has a bulk thermal conductivity of about 3 W/m C. 
     
     
         14 . The electronic appliance of  claim 12 , further comprising a thermal interface material height of about 4 mm uncompressed. 
     
     
         15 . The electronic appliance of  claim 14 , wherein the thermal interface material height is designed to be about 3 mm when compressed.