US2008159347A1PendingUtilityA1
Method and apparatus for a low parasitic capacitance butt-joined passive waveguide connected to an active structure
Assignee: AVAGO TECH FIBER IP SG PTE LTDPriority: Sep 17, 2004Filed: Mar 11, 2008Published: Jul 3, 2008
Est. expirySep 17, 2024(expired)· nominal 20-yr term from priority
G02B 6/12004G02B 6/26G02B 6/42
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Claims
Abstract
Undoped layers are introduced in the passive waveguide section of a butt-joined passive waveguide connected to an active structure. This reduces the parasitic capacitance of the structure.
Claims
exact text as granted — not AI-modified1 . An active-passive butt-joint structure for reduced parasitic capacitance comprising:
a III-V substrate; an active structure disposed over said substrate comprised of an active region sandwiched between two separate confinement heterostructure layers; and a passive butt-joint structure comprised of a passive Q-waveguide core sandwiched between two undoped III-V layers, said passive butt-joint structure disposed over said substrate and aligned adjacent to said active structure such that said active region is adjacent to said passive Q-waveguide core.
2 . The structure of claim 1 wherein said undoped III-V layers are comprised of InP.
3 . The structure of claim 1 wherein said substrate is comprised of N-InP.
4 . The structure of claim 1 wherein a first thickness of each said two undoped III-V layers is adjusted to control parasitic capacitance.
5 . The structure of claim 1 wherein said active structure comprises an EA-modulator.
6 . The structure of claim 1 wherein a second thickness of said passive Q-waveguide core is selected to achieve a good mode match to said active region.
7 . The structure of claim 1 wherein a composition of said passive Q-waveguide core is selected to achieve a good mode match to said active region.
8 . The structure of claim 1 wherein said active structure comprises a laser.
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