US2008157413A1PendingUtilityA1

Method of manufacturing optical interference color display

Assignee: QUALCOMM MEMS TECHNOLOGIES INCPriority: Feb 4, 2005Filed: Mar 18, 2008Published: Jul 3, 2008
Est. expiryFeb 4, 2025(expired)· nominal 20-yr term from priority
Inventors:Wen-Jian Lin
H10F 39/806G02F 1/21G02B 5/285
58
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Claims

Abstract

The method of manufacturing an optical interference color display is described. A first electrode structure is formed over a substrate first. At least one first area, second area and third area are defined on the first electrode structure. A first sacrificial layer is formed over the first electrode structure of the first area, the second area and the third area. Moreover, a second sacrificial layer is formed over the first sacrificial layer inside the second area and the third area. In addition, a third sacrificial layer is formed over the second sacrificial layer inside the third area. The etching rates of all sacrificial layers are different. Then, a patterned support layer is formed over the first electrode structure. Next, a second electrode layer is formed and the sacrificial layers are removed to form air gaps. Therefore, the air gaps are effectively controlled by using the material having different etching rates.

Claims

exact text as granted — not AI-modified
1 . A method of fabricating an optical interference color display, comprising:
 providing a substrate, and forming a first electrode structure over the substrate;   defining a first area, a second area, and a third area on the first electrode structure;   forming a first sacrificial layer over the first electrode structure of the first area;   forming a second sacrificial layer over the first electrode structure of the second area;   forming a third sacrificial layer over the first electrode structure of the third area, wherein the first sacrificial layer, the second sacrificial layer and the third sacrificial layer having different etching rates and thicknesses;   forming a patterned support layer over the first electrode structure;   forming a second electrode layer over the first sacrificial layer inside the first area, the second sacrificial layer inside the second area, the third sacrificial layer inside the third area and a portion of the patterned support layer; and   removing the first sacrificial layer, the second sacrificial layer and the third sacrificial layer to form a plurality of air gaps between the first electrode structure and the second electrode layer.   
   
   
       2 . The method of fabricating an optical interference color display of  claim 1 , wherein the substrate comprises a glass substrate or a plastic substrate. 
   
   
       3 . The method of fabricating an optical interference color display of  claim 1 , wherein the steps of forming the first electrode structure comprise: forming a plurality of first electrodes over the substrate; forming an absorption layer over the first electrodes; and forming an optical layer over the absorption layer. 
   
   
       4 . The method of fabricating an optical interference color display of  claim 3 , wherein the first electrodes are transparent electrodes, and a material of the first electrodes comprises indium tin oxide (ITO). 
   
   
       5 . The method of fabricating an optical interference color display of  claim 3 , wherein a material of the absorption layer comprises Chromium (Cr) or Molybdenum chromium (MoCr). 
   
   
       6 . The method of fabricating an optical interference color display of  claim 3 , wherein a material of the optical layer comprises silicon nitride or silicon oxide. 
   
   
       7 . The method of fabricating an optical interference color display of  claim 1 , wherein a material of the patterned support layer comprises a photoresist layer. 
   
   
       8 . The method of fabricating an optical interference color display of  claim 1 , wherein an etching rate of the second sacrificial layer is more than 1.5 times of an etching rate of the first sacrificial layer, and an etching rate of the third sacrificial layer is more than 1.5 times of the etching rate of the second sacrificial layer. 
   
   
       9 . The method of fabricating an optical interference color display of  claim 1 , wherein a material of the first sacrificial layer is selected from a group consisting of MoCr, Cr, polysilicon, amorphous silicon and N-type amorphous silicon. 
   
   
       10 . The method of fabricating an optical interference color display of  claim 1 , wherein a material of the second sacrificial layer is selected from a group consisting of MoCr, Cr, polysilicon, amorphous silicon and N-type amorphous silicon. 
   
   
       11 . The method of fabricating an optical interference color display of  claim 1 , wherein a material of the third sacrificial layer is selected from a group consisting of MoCr, Cr, polysilicon, amorphous silicon and N-type amorphous silicon. 
   
   
       12 . The method of fabricating an optical interference color display of  claim 1 , wherein the second electrode layer is a metal electrode, and a material of the second electrode layer is selected from a group consisting of Mo, Mo alloy, aluminum, aluminum alloy, Cr, nickel, titanium, and a combination thereof. 
   
   
       13 . A method of fabricating an optical interference color display, comprising:
 providing a substrate, and forming a first electrode structure over the substrate;   defining a first area and a second area on the first electrode structure;   forming a first sacrificial layer over the first electrode structure of the first area;   forming a second sacrificial layer over the first electrode structure of the second area, the first sacrificial layer and the second sacrificial layer having different etching rates and thicknesses;   forming a patterned support layer over the first electrode structure;   forming a second electrode layer over the first sacrificial layer inside the first area, the second sacrificial layer inside the second area and a portion of the patterned support layer; and   removing the first sacrificial layer and the second sacrificial layer to form a plurality of air gaps between the first electrode structure and the second electrode layer.

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