Semiconductor Devices Having Single Crystalline Silicon Layers

Abstract

Methods of manufacturing semiconductor devices having at least one single crystal silicon layer are provided. Pursuant to these methods, a first seed layer that includes silicon is formed. A first non-single crystalline silicon layer is then formed on the first seed layer. The first non-single crystalline silicon layer is irradiated with a laser to transform the first non-single crystalline silicon layer into a first single crystalline silicon layer. Corresponding semiconductor devices are also disclosed.

1 . A semiconductor device comprising:
 a first seed layer including silicon; and   a first single crystalline silicon layer formed on the first seed layer by transforming a crystal structure of an amorphous silicon layer into a single crystal structure using the silicon in the first seed layer as a seed for crystallization during a phase change of the amorphous silicon by a laser.   
   
   
       2 . The semiconductor device of  claim 1 , wherein the first seed layer comprises an epitaxial layer formed by a selective epitaxial growth (SEG) process. 
   
   
       3 . The semiconductor device of  claim 2 , wherein the SEG process comprises a vapor phase epitaxy process. 
   
   
       4 . The semiconductor device of  claim 1 , further comprising a second seed layer that includes silicon on the first single crystalline silicon layer and a second single crystalline silicon layer on the second seed layer. 
   
   
       5 . A semiconductor device comprising:
 a first single crystalline silicon layer;   a first insulation layer on the first single crystalline silicon layer, the first insulation layer including an opening that exposes a surface of the first single crystalline silicon layer;   a first seed layer in the opening, the first seed including silicon; and   a second single crystalline silicon layer is provided on the first insulation layer by transforming, a crystal structure of an amorphous silicon layer including an amorphous material into a single crystal structure using the silicon in the first seed layer as a seed for crystallization during a phase change of the amorphous silicon induced by a laser.   
   
   
       6 . The semiconductor device of  claim 5 , wherein the first single crystalline silicon layer comprises a silicon substrate or a silicon-on-insulator (SOI) substrate. 
   
   
       7 . The semiconductor device of  claim 5 , wherein the first seed layer includes an epitaxial layer formed by a selective epitaxial growth (SEG) process. 
   
   
       8 . The semiconductor device of  claim 6 , further comprising a semiconductor structure on the first single crystalline silicon layer. 
   
   
       9 . The semiconductor device of  claim 5 , further comprising a second insulation layer that includes an opening therein on the second single crystalline silicon layer, a second seed layer that includes silicon in the opening of the second insulation layer, and a third single crystalline silicon layer on the second seed layer.