Organic semiconductor element having multi protection layers and process of making the same

Abstract

An organic semiconductor element having multi protection layers and process of making the same are provided. Firstly, forming a first protection layer on the thin film transistor. Next, forming a second protection layer which is thick enough to serve as the photo spacers on said first protection layer. The multi protection layers are then grown on said organic thin film transistor, so as to enable the second protection layer to have the additional function of the photo spacers by the patterning process. Thus the organic thin film transistor can be prevented from being damaged, and achieving the simplification of the manufacturing process and the reduction of the production cost.

1 . An organic semiconductor element having multi production layers, including: an organic thin film transistor; a first protection layer formed on said organic thin film transistor; and a second protection layer formed on said first protection layer through a patterning process, said second protection layer is of sufficient thickness to serve as a photo spacer. 
   
   
       2 . The organic semiconductor element having multi production layers of  claim 1 , wherein the thickness of said second protection layer is over 4 μm. 
   
   
       3 . The organic semiconductor element having multi production layers of  claim 1 , further comprising a substrate, said substrate is kept a distance apart from said organic thin film transistor and said first protection layer by said second protection layer. 
   
   
       4 . The organic semiconductor element having multi production layers of  claim 1 , wherein said second protection layer is provided with a contact hole, which is used to penetrate said second protection layer and said first protection layer thus to expose said organic thin film transistor. 
   
   
       5 . The organic semiconductor element having multi production layers of  claim 4 , further comprising an electrode, formed on top of said second protection layer, and is electrically connected to said thin film transistor via said contact hole. 
   
   
       6 . The organic semiconductor element having multi production layers of  claim 1 , wherein said organic thin film transistor is selected from the group consisted of the bottom contact organic thin film transistor, the top contact organic thin film transistor, the bottom gate organic thin film transistor, and the top gate organic thin film transistor. 
   
   
       7 . The organic semiconductor element having multi production layers of  claim 1 , wherein the formation method of said first protection layer and said second protection layer is selected from the group consisted of solution treatment method and the vapor deposition method. 
   
   
       8 . The organic semiconductor element having multi production layers of  claim 7 , wherein said first protection layer and said second protection layer are formed by the same process using different solutions. 
   
   
       9 . The organic semiconductor element having multi production layers of  claim 7 , wherein the solution treatment process is selected from the group consisting of spin coating, screen printing, inject printing, and spinless coating. 
   
   
       10 . The organic semiconductor element having multi production layers of  claim 7 , wherein the vapor deposition method is selected from the group consisting of the chemical vapor deposition (CVD) method, the organic chemical vapor deposition (OCVD) method, and the co-evaporation method. 
   
   
       11 . The organic semiconductor element having multi production layers of  claim 1 , wherein said second protection layer is made of a developable material. 
   
   
       12 . The organic semiconductor element having multi production layers of  claim 11 , wherein the patterning process is realized through the photolithography process. 
   
   
       13 . The organic semiconductor element having multi production layers of  claim 11 , wherein the developable material is the SU-8 2002 photoresist. 
   
   
       14 . The organic semiconductor element having multi production layers of  claim 1 , wherein the patterning process is realized through the laser processing. 
   
   
       15 . The organic semiconductor element having multi production layers of  claim 1 , wherein said protection layer is made of the Dichromated Poly Vinyl Alcohol (DCPVA). 
   
   
       16 - 30 . (canceled)