Clustered surface preparation for silicide and metal contacts

Abstract

A cluster tool is provided for the implementing of a clustered and integrated surface pre-cleaning of the surface of semiconductor devices. More particularly, there is provided a cluster tool and a method of utilization thereof in an integrated semiconductor device surface pre-cleaning, which is directed towards a manufacturing aspect in which a chamber for performing a dry processing chemical oxide removal (COR) on the semiconductor device surface is clustered with other tools, such as a metal deposition tool for silicide or contact formation, including the provision of a vacuum transfer module in the cluster tool.

1 - 9 . (canceled) 
   
   
       10 . A cluster tool arrangement for the integrated pre-cleaning of a semiconductor surface and surface preparation for forming metal and silicide contacts thereon; comprising:
 at least one load lock for receiving a semiconductor having an oxide on one surface thereof;   a transfer chamber for receiving said semiconductor from said at least one load lock under a vacuum condition;   a pre-treatment chamber for receiving said semiconductor from said transfer chamber, while maintaining said vacuum condition, said substrate being subjected to a dry chemical oxide removal (COR) treatment in said pre-treatment chamber to remove the oxide from said semiconductor surface, and thereafter, re-convey said semiconductor to said transfer chamber; and   a metal deposition chamber for receiving said pre-cleaned substrate from said transfer chamber for depositing metal on said semiconductor surface and form a silicide on said surface to produce contacts.   
   
   
       11 . A cluster tool arrangement as claimed in  claim 10 , wherein a further said load lock receives said substrate from said transfer chamber subsequent to the forming of said silicide on said semiconductor surface and upon said semiconductor being transferred from said metal deposition chamber to said transfer chamber. 
   
   
       12 . A cluster tool arrangement as claimed in  claim 10 , wherein said arrangement is maintained under a continuous vacuum condition. 
   
   
       13 . A cluster tool arrangement as claimed in  claim 10 , wherein said pre-cleaning chamber contains a gaseous medium for removing said oxide from the surface of said semiconductor. 
   
   
       14 . A cluster tool arrangement as claimed in  claim 13 , wherein said gaseous medium comprises nitrogen trifluoride (NF 3 ). 
   
   
       15 . A cluster tool arrangement as claimed in  claim 10 , wherein said metal is cobalt. 
   
   
       16 . A cluster tool arrangement as claimed in  claim 15 , wherein said silicide is cobalt silicide. 
   
   
       17 . A cluster tool arrangement as claimed in  claim 10 , wherein said metal is titanium. 
   
   
       18 . A cluster tool arrangement as claimed in  claim 17 , wherein metal is formed into metal nitride, which is deposited on said semiconductor surface in said metal deposition chamber to produce contacts. 
   
   
       19 . A cluster tool arrangement as claimed in  claim 10 , wherein said transfer chamber, pre-treatment chamber and metal deposition chamber are maintained under continuous vacuum conditions.