CMP related scratch and defect improvement

Abstract

A method for serially polishing a plurality of semiconductor wafers, wherein a CMP apparatus having a first polishing pad and a second polishing pad is provided. A first slurry composition is disposed between the first polishing pad and a first wafer when the first wafer is in a first state, and a first polishing on the first wafer via the first polishing pad and first slurry composition is commenced at a first commencement time. A second slurry composition is disposed between the second polishing pad and a second wafer when the second wafer is in a second state, and a second polishing on the second wafer via the second polishing pad and second slurry is commenced at a second commencement time, wherein the second commencement time differs from the first commencement time by a first intermediate period. One or more of the first wafer and the second wafer is rinsed with a pre-rinse agent for at least a portion of the first intermediate period. The first polishing and second polishing are halted at substantially the same end time, therein placing the first wafer in the second state and the second wafer in a third state.

1 . A method for serially polishing a plurality of semiconductor wafers, the method comprising:
 providing a CMP apparatus comprising a first polishing stage having a first polishing pad associated therewith and a second polishing stage having a second polishing pad associated therewith;   disposing a first slurry composition between the first polishing pad and a first wafer when the first wafer is in a first state;   disposing a second slurry composition between the second polishing pad and a second wafer when the second wafer is in a second state;   commencing a first polishing on the first wafer via the first polishing pad and first slurry composition at a first commencement time;   commencing a second polishing on the second wafer via the second polishing pad and second slurry at a second commencement time, wherein the second commencement time differs from the first commencement time by a first intermediate period;   rinsing one or more of the first wafer and the second wafer with a pre-rinse agent for at least a portion of the first intermediate period; and   halting the first polishing on the first wafer and the second polishing on the second wafer at substantially the same end time, therein placing the first wafer in the second state and the second wafer in the third state.   
   
   
       2 . The method of  claim 1 , providing the CMP apparatus further comprises providing a buffing pad, the method further comprising:
 commencing a buffing on a third wafer in the third state via the buffing pad at a third commencement time, wherein the third commencement time differs from the first commencement time by a second intermediate period, and wherein the third commencement time differs from the second commencement time by a third intermediate period;   rinsing one or more of the first wafer, second wafer, and third wafer with a pre-rinse agent for at least a portion of one or more of the first intermediate period, second intermediate period, and third intermediate period; and   halting the first polishing on the first wafer, the second polishing on the second wafer, and the buffing on the third wafer at substantially the same end time.   
   
   
       3 . The method of  claim 2 , further comprising:
 rinsing one or more of the first polishing pad, the second polishing pad, and the buffing pad with a residual slurry removal compound for at least a portion of one or more of the first intermediate time, second intermediate time, and third intermediate time.   
   
   
       4 . The method of  claim 1 , wherein providing the CMP apparatus further comprises providing a third polishing pad, the method further comprising:
 commencing a third polishing on a wafer in the third state via the third polishing pad at a third commencement time, wherein the third commencement time differs from the first commencement time by a second intermediate period, and wherein the third commencement time differs from the second commencement time by a third intermediate period;   rinsing one or more of the first wafer, second wafer, and third wafer with a pre-rinse agent for at least a portion of one or more of the first intermediate period, second intermediate period, and third intermediate period; and   halting the first polishing on the first wafer, the second polishing on the second wafer, and the third polishing on the third wafer at substantially the same end time.   
   
   
       5 . The method of  claim 4 , further comprising:
 rinsing one or more of the first polishing pad, the second polishing pad, and the third polishing pad with a residual slurry removal compound for at least a portion of one or more of the first intermediate time, second intermediate time, and third intermediate time.   
   
   
       6 . The method of  claim 1 , wherein the pre-rinse agent comprises a moisture maintaining compound. 
   
   
       7 . The method of  claim 1 , wherein the pre-rinse agent comprises one or more of de-ionized water, benzotriazole. 
   
   
       8 . The method of  claim 1 , wherein the first polishing on the first wafer comprises removing at least a portion of a first layer disposed on the first wafer. 
   
   
       9 . The method of  claim 8 , wherein the first layer comprises a metal layer. 
   
   
       10 . The method of  claim 9 , wherein the metal layer comprises one or more of copper, aluminum, titanium, tantalum, and tungsten. 
   
   
       11 . The method of  claim 8 , wherein the first layer comprises a dielectric material. 
   
   
       12 . The method of  claim 1 , further comprising:
 moving the first wafer from the first polishing stage to the second polishing stage when the first wafer is in a second state;   disposing the second slurry composition between the second polishing pad and the first wafer; and commencing the second polishing on the first wafer at a fourth commencement time.   
   
   
       13 . The method of  claim 1 , further comprising rinsing one or more of the first polishing pad and second polishing pad after the first polishing on the first wafer and second wafer is halted. 
   
   
       14 . A method for polishing a plurality of workpieces, the method comprising:
 providing a CMP apparatus comprising a first polishing pad and a second polishing pad;   commencing a first polishing on a first workpiece in a first state at a first commencement time via a first slurry composition provided between the first workpiece and the first polishing pad;   commencing a second polishing on a second workpiece in a second state at a second commencement via a second slurry composition provided between the second workpiece and the second polishing pad, wherein the second commencement time differs from the first commencement time by a first intermediate period;   rinsing one or more of the first workpiece and the second workpiece with a pre-rinse agent for at least a portion of the first intermediate period; and   halting the first polishing on the first workpiece and second polishing on the second workpiece at substantially the same time, therein defining an end time wherein the first workpiece is in the second state and the second workpiece is in a third state.   
   
   
       15 . The method of  claim 14 , wherein providing the CMP apparatus further comprises providing a buffing pad, the method further comprising:
 commencing a buffing on a third workpiece in the third state via the buffing pad at a third commencement time, wherein the third commencement time differs from the first commencement time by a second intermediate period, and wherein the third commencement time differs from the second commencement time by a third intermediate period;   rinsing one or more of the first workpiece, second workpiece, and third workpiece with a pre-rinse agent for at least a portion of one or more of the first intermediate period, second intermediate period, and third intermediate period; and   halting the first polishing on the workpiece, the second polishing on the second workpiece, and the buffing on the third workpiece at substantially the same end time.   
   
   
       16 . The method of  claim 15 , further comprising:
 rinsing one or more of the first polishing pad, the second polishing pad, and the buffing pad with a residual slurry removal compound for at least a portion of one or more of the first intermediate time, second intermediate time, and third intermediate time.   
   
   
       17 . The method of  claim 14 , wherein providing the CMP apparatus further comprises providing a third polishing pad, the method further comprising:
 commencing a third polishing on a third workpiece in the third state at a third commencement time via the third polishing pad, wherein the third commencement time differs from the first commencement time by a second intermediate period, and wherein the third commencement time differs from the second commencement time by a third intermediate period;   rinsing one or more of the first workpiece, second workpiece, and third workpiece with a pre-rinse agent for at least a portion of one or more of the first intermediate period, second intermediate period, and third intermediate period; and   halting the first polishing on the first workpiece, the second polishing on the second workpiece, and the third polishing on the third workpiece at substantially the same end time.   
   
   
       18 . The method of  claim 17 , further comprising:
 rinsing one or more of the first polishing pad, the second polishing pad, and the third polishing pad with a residual slurry removal compound for at least a portion of one or more of the first intermediate time, second intermediate time, and third intermediate time.   
   
   
       19 . The method of  claim 14 , further comprising:
 transferring the first workpiece to the second polishing pad when the first workpiece is in a second state;   disposing the second slurry composition between the second polishing pad and the first workpiece; and commencing the second polishing on the first workpiece at a fourth commencement time.   
   
   
       20 . A method for polishing a plurality of workpieces, the method comprising:
 commencing a first polishing on a first workpiece in a first state at a first commencement time; commencing a second polishing on a second workpiece in a second state at a second commencement, wherein the second commencement time differs from the first commencement time by a first intermediate period;   rinsing one or more of the first workpiece and the second workpiece with a pre-rinse agent for at least a portion of the first intermediate period; and   halting the first polishing on the first workpiece and second polishing on the second workpiece at substantially the same time, therein defining an end time wherein the first workpiece is placed in the second state and the second workpiece is placed in a third state.