Manufacturing Method of Semiconductor Device

Abstract

Illumination devices ( 7 a ) and ( 7 b ) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover ( 8 ) of a dicing device ( 1 ). After a wafer is placed on a dicing stage ( 3 ), when the wafer is diced by a blade ( 4 a ) attached to a spindle ( 5 ), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices ( 7 a ) and ( 7 b ). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle ( 5 ) or the like is not present on the wafer.

What is claimed is: 
     
         1 . A manufacturing method of a semiconductor device comprising:
 (a) a step of placing a wafer on which a wafer process has been completed on a dicing stage in a dicing process unit covered with a semi-transparent cover or a light-shielding cover in a dicing device;   (b) a step of performing two-step cutting to a scribe area from a first main surface by first and second dicing blades held so that side surfaces thereof are opposed to each other while supplying water or chemical solution containing water as a main component to the first main surface of the wafer on which a semiconductor device having electrodes containing aluminum as a main component is formed,   wherein, in the step (b), an average illuminance of the first main surface is kept at not less than 70 lux.   
     
     
         2 . The manufacturing method of a semiconductor device according to the  claim 1 ,
 wherein, in the step (b), a minimum illuminance on the first main surface is kept so that the illuminance does not become lower than 70 lux at any positions on the first main surface.   
     
     
         3 . The manufacturing method of a semiconductor device according to  claim 1 ,
 wherein the illuminance in the step (b) is kept by an illumination lamp disposed in the dicing device.   
     
     
         4 . The manufacturing method of a semiconductor device according to  claim 1 ,
 wherein the illuminance in the step (b) is kept by a plurality of illumination lamps disposed in the dicing device.   
     
     
         5 . The manufacturing method of a semiconductor device according to  claim 1 ,
 wherein the average illuminance is not less than 70 lux and less than 2000 lux.   
     
     
         6 . The manufacturing method of a semiconductor device according to  claim 1 ,
 wherein the average illuminance is not less than 80 lux and less than 1500 lux.   
     
     
         7 . The manufacturing method of a semiconductor device according to  claim 1 ,
 wherein the average illuminance is not less than 90 lux and less than 1300 lux.   
     
     
         8 . The manufacturing method of a semiconductor device according to  claim 1 ,
 wherein the average illuminance is not less than 100 and less than 1200 lux.   
     
     
         9 . The manufacturing method of a semiconductor device according to  claim 1 ,
 wherein the average illuminance is not less than 80 lux and less than 500 lux.   
     
     
         10 . The manufacturing method of a semiconductor device according to  claim 1 ,
 wherein the average illuminance is not less than 90 and less than 300 lux.   
     
     
         11 . A manufacturing method of a semiconductor device comprising:
 (a) a step of placing a wafer on which a wafer process has been completed on a dicing stage in a dicing process unit in a dicing device; and   (b) a step of performing two-step cutting to a scribe area from a first main surface by first and second dicing blades held so as to belong to substantially the same plane while supplying water or chemical solution containing water as a main component to the first main surface of the wafer on which a semiconductor device having electrodes containing aluminum as a main component is formed,   wherein, in the step (b), an average illuminance of the first main surface is kept at not less than 70 lux, and a minimum illuminance on the first main surface is kept so that the illuminance does not become lower than 70 lux at any positions on the first main surface.   
     
     
         12 . The manufacturing method of a semiconductor device according to  claim 11 ,
 wherein the average illuminance and the minimum illuminance on the first main surface are not less than 70 lux and less than 2000 lux.   
     
     
         13 . The manufacturing method of a semiconductor device according to  claim 11 ,
 wherein the average illuminance and the minimum illuminance on the first main surface are not less than 80 lux and less than 1500 lux.   
     
     
         14 . The manufacturing method of a semiconductor device according to  claim 11 ,
 wherein the average illuminance and the minimum illuminance on the first main surface are not less than 90 lux and less than 1300 lux.   
     
     
         15 . The manufacturing method of a semiconductor device according to  claim 11 ,
 wherein the average illuminance and the minimum illuminance on the first main surface are not less than 100 lux and less than 1200 lux.   
     
     
         16 . The manufacturing method of a semiconductor device according to  claim 11 ,
 wherein the average illuminance and the minimum illuminance on the first main surface are not less than 80 lux.   
     
     
         17 . The manufacturing method of a semiconductor device according to  claim 11 ,
 wherein the illuminance during the step (b) is kept by an illumination lamp disposed in the dicing device.   
     
     
         18 . The manufacturing method of a semiconductor device according to  claim 11 ,
 wherein the illuminance during the step (b) is kept by a plurality of illumination lamps disposed in the dicing device.   
     
     
         19 . A manufacturing method of a semiconductor device comprising:
 (a) a step of placing a wafer on which a wafer process has been completed on a dicing stage in a dicing process unit in a dicing device; and   (b) a step of performing cutting to a scribe area from a first main surface by a dicing blade while supplying water or chemical solution containing water as a main component to the first main surface of the wafer on which a semiconductor device having electrodes containing aluminum as a main component is formed,   wherein, in the step (b), an average illuminance of the first main surface is kept at not less than 70.   
     
     
         20 . The manufacturing method of a semiconductor device according to  claim 19 ,
 wherein process time of the step (b) is not less than 30 minutes.