US2008136751A1PendingUtilityA1

Organic Light Emitting Diode Display on a Flexible Substrate

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Individually held — no corporate assignee on recordPriority: Jul 11, 2002Filed: Jan 28, 2008Published: Jun 12, 2008
Est. expiryJul 11, 2022(expired)· nominal 20-yr term from priority
Inventors:Apostolos T. Voutsas
H10D 86/40H10D 86/411H10D 86/60H10D 30/6758H10D 30/6739H10D 30/0321H10D 30/0314H10D 86/0212H10K 59/12H10K 2102/311H10K 2102/3026H10K 59/1213H10K 77/111Y02P70/50G11C 2213/31G11C 13/0007Y02E10/549
54
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Claims

Abstract

A flexible metal foil substrate organic light emitting diode (OLED) display and a method for forming the same are provided. The method comprises: supplying a metal foil substrate such as titanium (Ti), Inconel alloy, or Kovar, having a thickness in the range of 10 to 500 microns; planarizing the metal foil substrate surface; depositing an electrical isolation layer having a thickness in the range of 0.5 to 2 microns overlying the planarized metal foil substrate surface; depositing amorphous silicon having a thickness in the range of 25 to 150 nanometers (nm) overlying the electrical insulation layer; from the amorphous silicon, forming polycrystalline silicon overlying the electrical insulation layer; forming thin-film transistors (TFTs) in the polycrystalline silicon; and, forming an electronic circuit using the TFTs, such as an OLED display.

Claims

exact text as granted — not AI-modified
1 - 12 . (canceled) 
     
     
         13 . A method for forming an organic light emitting diode (OLED) display on a flexible substrate, the method comprising:
 supplying a metal foil substrate with a surface selected from the group including titanium (Ti), Inconel alloy, and Kovar;   forming polycrystalline silicon overlying the electrical insulation layer;   forming thin-film transistors (TFTs) in the polycrystalline silicon; and,   forming OLEDs overlying the TFTs.   
     
     
         14 . The method of  claim 13  further comprising:
 planarizing the metal foil substrate surface;   depositing an electrical isolation layer overlying the planarized metal foil substrate surface;   depositing amorphous silicon overlying the electrical insulation layer; and,   wherein forming polycrystalline silicon overlying the electrical insulation layer includes forming polycrystalline silicon from the amorphous silicon.   
     
     
         15 . The method of  claim 13  wherein supplying a metal foil substrate with a surface includes supplying a metal foil having a thickness in the range of 10 to 500 microns. 
     
     
         16 . The method of  claim 15  wherein supplying a metal foil substrate with a surface includes supplying a metal foil having a thickness in the range of 50 to 250 microns. 
     
     
         17 . The method of  claim 16  wherein supplying a metal foil substrate with a surface includes supplying a metal foil having a thickness in the range of 100 to 200 microns. 
     
     
         18 . The method of  claim 14  wherein depositing an electrical isolation layer overlying the planarized metal foil substrate surface includes depositing a layer having a thickness in the range of 0.5 to 2 microns. 
     
     
         19 . The method of  claim 18  wherein depositing an electrical isolation layer overlying the planarized metal foil substrate surface includes depositing a layer having a thickness in the range of 0.5 to 1.5 microns. 
     
     
         20 . The method of  claim 19  wherein depositing an electrical isolation layer overlying the planarized metal foil substrate surface includes depositing a layer having a thickness in the range of 0.5 to 1 microns. 
     
     
         21 . The method of  claim 14  wherein depositing amorphous silicon includes depositing amorphous silicon having a thickness in the range of 25 to 150 nanometers (nm). 
     
     
         22 . The method of  claim 21  wherein depositing amorphous silicon includes depositing amorphous silicon having a thickness in the range of 25 to 100 nm. 
     
     
         23 . The method of  claim 22  wherein depositing amorphous silicon includes depositing amorphous silicon having a thickness in the range of 35 to 60 nm. 
     
     
         24 . The method of  claim 13  wherein forming OLEDs overlying the TFTs includes:
 forming a metal anode overlying the TFTs;   forming a polymer organic layer overlying the anode; and,   forming a semi-transparent cathode overlying the organic layer.   
     
     
         25 . The method of  claim 13  further comprising:
 forming a resin layer overlying the OLEDs; and,   forming a seal plate overlying the resin layer.   
     
     
         26 . The method of  claim 13  wherein forming OLEDs overlying the TFTs includes:
 forming a metal cathode overlying the TFTs;   forming a polymer organic layer overlying the cathode; and,   forming a semi-transparent anode overlying the organic layer.   
     
     
         27 - 43 . (canceled)

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