Method for making junction and processed material formed using the same

Abstract

An object of this invention is to provide a method for making a junction which is simple in the process, high in the throughput, and can make a shallow junction with high accuracy. After the suitable state of a substrate surface adapted to the wavelength of an electromagnetic wave to be applied has been formed, the electromagnetic wave is applied to electrically activate impurities so that the excited energy is effectively absorbed within the impurity thin film, thereby effectively making a shallow junction.

1 - 16 . (canceled) 
   
   
       17 . A processed material formed by the method for making a junction comprising the steps of:
 irradiating a plasma containing He or a plasma containing Ar to a substrate;   introducing impurities into the substrate; and   irradiating an electromagnetic wave so as to electrically activate the impurities.   
   
   
       18 . A processed material formed by the method for making a junction comprising the steps of:
 irradiating either a plasma containing He or a plasma containing Ar and a plasma containing particles to be served as impurities to a substrate, so as to introduce the impurities into the substrate; and   irradiating an electromagnetic wave so as to electrically activate the impurities.