Modulated trigger device

Abstract

A trigger device. The device includes: a MOSFET comprising a source, a drain, a gate and a body; a modulating layer under the body; body and modulating layer contacts, the body contact separated from the source, drain and modulating contact by dielectric isolation in the body; the modulating layer contact separated from the source and drain by the dielectric isolation, the source and drain extending from a top surface of the body into the body a first distance, the body contact extending a second distance and the dielectric isolation extending a third distance, the third distance greater than the first or second distances; a first vertical bipolar transistor comprising the source, the body and the modulating layer; and a second vertical bipolar transistor comprising the drain, the body and the modulating layer.

1 . A trigger device comprising:
 a lateral MOSFET comprising a source, a drain, a gate and a body;   a modulating layer under and in contact with said body;   a body contact and a modulating layer contact, said body contact separated from said source, said drain and said modulating contact by dielectric isolation formed in said body; said modulating layer contact separated from said source and said drain by said dielectric isolation, said source and drain extending from a top surface of said body into said body a first distance, said body contact extending from said top surface of said body into said body a second distance, said dielectric isolation extending from said top surface of said body into said body a third distance, said third distance greater than said first or second distances;   a first vertical bipolar transistor comprising said source, said body and said modulating layer; and   a second vertical bipolar transistor comprising said drain, said body and said modulating layer.   
     
     
         2 . The trigger device of  claim 1 , wherein said source, said drain or both said source and said drain comprise multiple fingers and said first vertical bipolar transistor, said second vertical bipolar transistor or both said first and second vertical bipolar transistors comprise multiple bipolar transistors, one vertical bipolar transistor for each source finger and one vertical bipolar transistor for each drain finger. 
     
     
         3 . The trigger device of  claim 1 , wherein application of a bias to said modulator decreases a gate voltage at which MOSFET breakdown occurs. 
     
     
         4 . The trigger device of  claim 1 , further including:
 a first junction between said body and said modulating layer under said source and said drain is a fourth distance from said top surface of said body; and   a second junction of said body and said modulating layer under said dielectric isolation and said body contact is a fifth distance from said top surface of said body, said fifth distance greater than said fourth distance.   
     
     
         5 . The trigger device of  claim 1 , further including:
 a first junction between said body and said modulating layer under said source, said drain and a first region of said dielectric isolation is a fourth distance from said top surface of said body; and   a second junction of said body and said modulating layer under said a second region of said dielectric isolation is a fifth distance from said top surface of said body, said second region of said dielectric isolation disposed between said source and said body contact or disposed between said drain and said body contact, said fourth distance greater than said fifth distance.   
     
     
         6 . The trigger device of  claim 1 , further including:
 a first junction between said body and said modulating layer under said source, said drain and said dielectric isolation is a fourth distance from said top surface of said body; and   a second junction of said body and said modulating layer under said body contact is a fifth distance from said top surface of said body, said fourth distance greater than said fifth distance.